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Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017301
Authors:  Guo LC;  Wang XL;  Xiao HL;  Ran JX;  Wang CM;  Ma ZY;  Luo WJ;  Wang ZG;  Guo LC Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: lcguo@semi.ac.cn
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Content Algan/gan Heterostructures  Chemical-vapor-deposition  Field-effect Transistors  Al-content  Algan/aln/gan Heterostructures  Hemt Structures  Phase Epitaxy  Sapphire  Gas  Densities  
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device  
氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马志勇;  王晓亮;  冉军学;  胡国新;  肖红领;  王翠梅;  罗卫军
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一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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宽带隙氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  胡国新;  肖红领;  冉军学;  王翠梅;  罗卫军
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Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 24, 页码: Art. No. 245104
Authors:  Zhang, XB;  Wang, XL;  Xiao, HL;  Yang, CB;  Ran, JX;  Wang, CM;  Hou, QF;  Li, JM;  Wang, ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xbzhang@semi.ac.cn
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In1-xgaxn Alloys  Band-gap  Irradiance  Single  Inn  
Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
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Inn  Mocvd  Mobility  
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Authors:  Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX;  Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
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Gan  Hemt  2deg  Mobility  Polarization  
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com
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Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)