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在硅衬底上生长的氮化镓薄膜结构及其生长方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  王晓亮;  罗卫军;  郭伦春;  肖红领;  李建平;  李晋闽 
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Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017301
Authors:  Guo LC;  Wang XL;  Xiao HL;  Ran JX;  Wang CM;  Ma ZY;  Luo WJ;  Wang ZG;  Guo LC Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: lcguo@semi.ac.cn
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Content Algan/gan Heterostructures  Chemical-vapor-deposition  Field-effect Transistors  Al-content  Algan/aln/gan Heterostructures  Hemt Structures  Phase Epitaxy  Sapphire  Gas  Densities  
氮化镓基双异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-07-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  冉学军;  肖红领;  王翠梅;  胡国新;  唐健;  罗卫军
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氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马志勇;  王晓亮;  冉军学;  胡国新;  肖红领;  王翠梅;  罗卫军
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宽带隙氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  胡国新;  肖红领;  冉军学;  王翠梅;  罗卫军
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Rashba spin splitting of the minibands of coupled InAs/GaAs pyramid quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 14, 页码: Art. No. 143113
Authors:  Zhang, XW;  Xu, Q;  Fan, WJ;  Luo, JW;  Li, SS;  Xia, JB;  Zhang, XW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: zhxw99@semi.ac.cn
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The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Authors:  Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX;  Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
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Gan  Hemt  2deg  Mobility  Polarization  
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com
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Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)  
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
SOLID-STATE ELECTRONICS, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Authors:  Wang, XL;  Chen, TS;  Xiao, HL;  Wang, CM;  Hu, GX;  Luo, WJ;  Tang, J;  Guo, LC;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
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Algan/aln/gan  Hemts  Sic  Power  
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Authors:  Luo, WJ;  Wang, XL;  Guo, LC;  Xiao, HL;  Wang, CM;  Ran, JX;  Li, JP;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
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Gallium Nitride Crack  Low Temperature Aluminum Nitride  Interlayer  Silicon