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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
Adobe PDF(1080Kb)  |  Favorite  |  View/Download：430/78  |  Submit date：2015/04/02
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
Adobe PDF(654Kb)  |  Favorite  |  View/Download：979/319  |  Submit date：2013/03/17
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 8, 页码: 82101
Authors:  Liu, GP;  Wu, J;  Zhao, GJ;  Liu, SM;  Mao, W;  Hao, Y;  Liu, CB;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
Adobe PDF(560Kb)  |  Favorite  |  View/Download：847/270  |  Submit date：2013/03/17
Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:  Sang, L;  Liu, JM;  Xu, XQ;  Wang, J;  Zhao, GJ;  Liu, CB;  Gu, CY;  Liu, GP;  Wei, HY;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
Adobe PDF(4053Kb)  |  Favorite  |  View/Download：833/202  |  Submit date：2013/03/17
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
Authors:  Wei M;  Wang XL;  Pan X;  Xiao HL;  Wang CM;  Yang CB;  Wang ZG;  Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
Adobe PDF(269Kb)  |  Favorite  |  View/Download：1681/628  |  Submit date：2011/09/14
Chemical-vapor-deposition  Phase Epitaxy  Aln Interlayers  Films  Stress  Layers  Dislocations  Reduction  Density  Diodes  
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  Favorite  |  View/Download：2519/831  |  Submit date：2011/07/17
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
Adobe PDF(396Kb)  |  Favorite  |  View/Download：1871/582  |  Submit date：2011/07/05
Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Yang CB;  Zhang ML
Adobe PDF(712Kb)  |  Favorite  |  View/Download：1223/365  |  Submit date：2011/07/07
Gan  Ferromagnetic  Implantation  Annealing  
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
Adobe PDF(459Kb)  |  Favorite  |  View/Download：2204/623  |  Submit date：2011/07/05
Efficiency  Quantum Dot  Gan  Efficiency  
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.28402
Authors:  Zhang XB;  Wang XL;  Xiao HL;  Yang CB;  Hou QF;  Yin HB;  Chen H;  Wang ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
Adobe PDF(606Kb)  |  Favorite  |  View/Download：1934/513  |  Submit date：2011/07/05
Ingan  Solar Cell  Multiple Quantum Wells  In1-xgaxn Alloys  Band-gap  Inn