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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:
Li, HJ
;
Liu, CB
;
Liu, GP
;
Wei, HY
;
Jiao, CM
;
Wang, JX
;
Zhang, H
;
Jin, DD
;
Feng, YX
;
Yang, SY
;
Wang, LS
;
Zhu, QS
;
Wang, ZG
Adobe PDF(1080Kb)
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View/Download:441/78
  |  
Submit date:2015/04/02
Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells
期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:
Liu, GP
;
Wu, J
;
Lu, YW
;
Zhao, GJ
;
Gu, CY
;
Liu, CB
;
Sang, L
;
Yang, SY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
Adobe PDF(654Kb)
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View/Download:990/319
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Submit date:2013/03/17
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 8, 页码: 82101
Authors:
Liu, GP
;
Wu, J
;
Zhao, GJ
;
Liu, SM
;
Mao, W
;
Hao, Y
;
Liu, CB
;
Yang, SY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
Adobe PDF(560Kb)
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View/Download:858/270
  |  
Submit date:2013/03/17
Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition
期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:
Sang, L
;
Liu, JM
;
Xu, XQ
;
Wang, J
;
Zhao, GJ
;
Liu, CB
;
Gu, CY
;
Liu, GP
;
Wei, HY
;
Liu, XL
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
Adobe PDF(4053Kb)
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View/Download:845/202
  |  
Submit date:2013/03/17
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
Authors:
Wei M
;
Wang XL
;
Pan X
;
Xiao HL
;
Wang CM
;
Yang CB
;
Wang ZG
;
Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
Adobe PDF(269Kb)
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View/Download:1721/628
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Submit date:2011/09/14
Chemical-vapor-deposition
Phase Epitaxy
Aln Interlayers
Films
Stress
Layers
Dislocations
Reduction
Density
Diodes
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Pan X (Pan Xu)
;
Wei M (Wei Meng)
;
Yang CB (Yang Cuibai)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)
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View/Download:2590/831
  |  
Submit date:2011/07/17
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:
Pan X
;
Wei M
;
Yang CB
;
Xiao HL
;
Wang CM
;
Wang XL
;
Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
Adobe PDF(396Kb)
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View/Download:1931/582
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Submit date:2011/07/05
Sandwich Structure
Stress
Aluminum Nitride
Gallium Nitride
Silicon
Phonon Deformation Potentials
Wurtzite Aln
Silicon
Stress
Transistors
Epitaxy
Layers
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:
Jiang LJ
;
Wang XL
;
Xiao HL
;
Wang ZG
;
Yang CB
;
Zhang ML
Adobe PDF(712Kb)
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View/Download:1233/365
  |  
Submit date:2011/07/07
Gan
Ferromagnetic
Implantation
Annealing
Theoretical study on InxGa1-xN/GaN quantum dots solar cell
期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
Authors:
Deng QW
;
Wang XL
;
Yang CB
;
Xiao HL
;
Wang CM
;
Yin HB
;
Hou QF
;
Li JM
;
Wang ZG
;
Hou X
;
Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
Adobe PDF(459Kb)
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View/Download:2239/623
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Submit date:2011/07/05
Efficiency
Quantum Dot
Gan
Efficiency
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.28402
Authors:
Zhang XB
;
Wang XL
;
Xiao HL
;
Yang CB
;
Hou QF
;
Yin HB
;
Chen H
;
Wang ZG
;
Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
Adobe PDF(606Kb)
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View/Download:1967/513
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Submit date:2011/07/05
Ingan
Solar Cell
Multiple Quantum Wells
In1-xgaxn Alloys
Band-gap
Inn