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基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计 期刊论文
Acta Physica Sinica, 2017, 卷号: 66, 页码: 158502
Authors:  叶焓;  韩勤;  吕倩倩;  潘盼;  安俊明;  王玉冰;  刘荣瑞;  侯丽丽
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氮化物深紫外LED研究新进展 期刊论文
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2015, 卷号: 45, 期号: 6, 页码: 067303
Authors:  王军喜;  闫建昌;  郭亚楠;  张韵;  田迎冬;  朱邵歆;  陈翔;  孙莉莉;  李晋闽
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能带调控提高GaN/InGaN多量子阱蓝光LED效率研究 期刊论文
中国科学: 物理学 力学 天文学, 2015, 卷号: 45, 期号: 6, 页码: 067305
Authors:  张连;  魏学成;  路坤熠;  魏同波;  王军喜;  李晋闽
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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 028504
Authors:  Wu, K;  Wei, TB;  Lan, D;  Zheng, HY;  Wang, JX;  Luo, Y;  Li, JM
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Structural and magnetic properties of Er-implanted GaN films 期刊论文
MATERIALS LETTERS, 2014, 卷号: 114, 页码: 22-25
Authors:  Tao, DY;  Liu, C;  Yin, CH;  Li, JM
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Optical properties of magnesium doped AlxGa1-xN (0.61 <= x <= 0.73) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 14, 页码: 143103
Authors:  Feneberg, M;  Osterburg, S;  Romero, MF;  Garke, B;  Goldhahn, R;  Neumann, MD;  Esser, N;  Yan, JC;  Zeng, JP;  Wang, JX;  Li, JM
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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1, 页码: 013108
Authors:  Zhang, YH;  Wei, TB;  Xiong, Z;  Shang, L;  Tian, YD;  Zhao, Y;  Zhou, PY;  Wang, JX;  Li, JM
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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123101
Authors:  Wu, K;  Wei, TB;  Zheng, HY;  Lan, D;  Wei, XC;  Hu, Q;  Lu, HX;  Wang, JX;  Luo, Y;  Li, JM
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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:  Wang, JM;  Xu, FJ;  Zhang, X;  An, W;  Li, XZ;  Song, J;  Ge, WK;  Tian, GS;  Lu, J;  Wang, XQ;  Tang, N;  Yang, ZJ;  Li, W;  Wang, WY;  Jin, P;  Chen, YH;  Shen, B
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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233102
Authors:  Yang, YJ;  Wang, JX;  Li, JM;  Zeng, YP
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