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Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 11, 页码: 115102
Authors:  Tian, T;  Wang, LC;  Guo, EQ;  Liu, ZQ;  Zhan, T;  Guo, JX;  Yi, XY;  Li, J;  Wang, GH
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Interface and transport properties of GaN/graphene junction in GaN-based LEDs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 50, 页码: 505102
Authors:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing);  Yi XY (Yi, Xiaoyan);  Wang JX (Wang, Junxi);  Zhu HW (Zhu, Hongwei);  Wang GH (Wang, Guohong)
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Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 6, 页码: 061102
Authors:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing);  Yi XY (Yi, Xiaoyan);  Wang JX (Wang, Junxi);  Zhu HW (Zhu, Hongwei);  Wang GH (Wang, Guohong)
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Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 096101
Authors:  Sun HH (Sun He-Hui);  Guo FY (Guo Feng-Yun);  Li DY (Li Deng-Yue);  Wang L (Wang Lu);  Zhao DG (Zhao De-Gang);  Zhao LC (Zhao Lian-Cheng)
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在硅衬底上生长的氮化镓薄膜结构及其生长方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  王晓亮;  罗卫军;  郭伦春;  肖红领;  李建平;  李晋闽 
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采用全光学膜体系的垂直结构发光二极管制作方法 专利
专利类型: 发明, 申请日期: 2009-01-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  伊晓燕;  王良臣;  王国宏;  李晋闽
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光学复合膜作电极的GaN功率型LED的制备方法 专利
专利类型: 发明, 申请日期: 2009-01-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李晋闽;  王晓东;  王国宏;  王良臣;  杨富华
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Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017301
Authors:  Guo LC;  Wang XL;  Xiao HL;  Ran JX;  Wang CM;  Ma ZY;  Luo WJ;  Wang ZG;  Guo LC Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: lcguo@semi.ac.cn
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Content Algan/gan Heterostructures  Chemical-vapor-deposition  Field-effect Transistors  Al-content  Algan/aln/gan Heterostructures  Hemt Structures  Phase Epitaxy  Sapphire  Gas  Densities  
一种氮化镓基小芯片LED阵列结构及制备方法 专利
专利类型: 发明, 申请日期: 2008-10-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王立彬;  伊晓燕;  刘志强;  陈宇;  郭德博;  王良臣
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GaN基功率型LED的N型欧姆接触电极的制备方法 专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈宇;  王良臣;  伊晓燕;  郭金霞
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