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High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Authors:  Yin, Haibo;  Wang, Xiaoliang;  Ran, Junxue;  Hu, Guoxin;  Zhang, Lu;  Xiao, Hongling;  Li, Jing;  Li, Jinmin;  Yin, H.(hbyin@semi.ac.cn)
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Epitaxial Growth  Gallium Nitride  
氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马志勇;  王晓亮;  冉军学;  胡国新;  肖红领;  王翠梅;  罗卫军
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一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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宽带隙氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  胡国新;  肖红领;  冉军学;  王翠梅;  罗卫军
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AlGaN／GaN背对背肖特基二极管氢气传感器 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 153-156
Authors:  王新华;  王晓亮;  冯春;  冉军学;  肖红领;  杨翠柏;  王保柱;  王军喜
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AlGaN/GaN型气敏传感器对于C0的响应研究 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1387-1390
Authors:  冯春;  王晓亮;  王新华;  肖红领;  王翠梅;  胡国新;  冉军学;  王军喜
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一种减小Mg记忆效应的GaN基pn结的生长方法 专利
专利类型: 发明, 申请日期: 2007-01-10, 公开日期: 2009-06-04, 2009-06-11
Inventors:  冉军学;  王晓亮;  李建平;  胡国新;  王军喜;  王翠梅;  曾一平
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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 791-793
Authors:  Wang XL (Wang Xiaoliang);  Wang CM (Wang Cuimei);  Hu GX (Hu Guoxin);  Mao HL (Mao Hongling);  Fang CB (Fang Cebao);  Wang JX (Wang Junxi);  Ran JX (Ran Junxue);  Li HP (Li Hanping);  Li JM (Li Jinmin);  Wang ZG (Wang, Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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2deg  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:  Wang XY (Wang, Xiaoyan);  Wang XL (Wang, Xiaoliang);  Hu GX (Hu, Guoxin);  Wang BZ (Wang, Baozhu);  Ma ZY (Ma, Zhiyong);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Ran JX (Ran, Junxue);  Li JP (Li, Jianping);  Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
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Alxga1-xn