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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Authors:
Yin, Haibo
;
Wang, Xiaoliang
;
Ran, Junxue
;
Hu, Guoxin
;
Zhang, Lu
;
Xiao, Hongling
;
Li, Jing
;
Li, Jinmin
;
Yin, H.(hbyin@semi.ac.cn)
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View/Download:1023/232
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Submit date:2012/06/14
Epitaxial Growth
Gallium Nitride
氮化镓基异质结场效应晶体管结构及制作方法
专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:
马志勇
;
王晓亮
;
冉军学
;
胡国新
;
肖红领
;
王翠梅
;
罗卫军
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View/Download:1014/181
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Submit date:2009/06/11
一种对气体传感器或半导体器件性能进行测试的系统
专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:
王晓亮
;
王新华
;
冯春
;
王保柱
;
马志勇
;
王军喜
;
胡国新
;
肖红领
;
冉军学
;
王翠梅
Adobe PDF(973Kb)
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View/Download:985/176
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Submit date:2009/06/11
宽带隙氮化镓基异质结场效应晶体管结构及制作方法
专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:
王晓亮
;
马志勇
;
胡国新
;
肖红领
;
冉军学
;
王翠梅
;
罗卫军
Adobe PDF(1354Kb)
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View/Download:1020/172
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Submit date:2009/06/11
AlGaN/GaN型气敏传感器对于C0的响应研究
期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1387-1390
Authors:
冯春
;
王晓亮
;
王新华
;
肖红领
;
王翠梅
;
胡国新
;
冉军学
;
王军喜
Adobe PDF(615Kb)
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View/Download:874/244
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Submit date:2010/11/23
AlGaN/GaN背对背肖特基二极管氢气传感器
期刊论文
半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 153-156
Authors:
王新华
;
王晓亮
;
冯春
;
冉军学
;
肖红领
;
杨翠柏
;
王保柱
;
王军喜
Adobe PDF(648Kb)
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View/Download:1034/298
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Submit date:2010/11/23
一种减小Mg记忆效应的GaN基pn结的生长方法
专利
专利类型: 发明, 申请日期: 2007-01-10, 公开日期: 2009-06-04, 2009-06-11
Inventors:
冉军学
;
王晓亮
;
李建平
;
胡国新
;
王军喜
;
王翠梅
;
曾一平
Adobe PDF(449Kb)
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View/Download:995/197
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Submit date:2009/06/11
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:
Ran JX (Ran Junxue)
;
Wang XL (Wang Xiaoliang)
;
Hu GX (Hu Guoxin)
;
Li JP (Li Jianping)
;
Wang BZ (Wang Baozhu)
;
Xiao HL (Xiao Hongling)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zhanguo)
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(259Kb)
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View/Download:1274/323
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Submit date:2010/03/29
Doping
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 791-793
Authors:
Wang XL (Wang Xiaoliang)
;
Wang CM (Wang Cuimei)
;
Hu GX (Hu Guoxin)
;
Mao HL (Mao Hongling)
;
Fang CB (Fang Cebao)
;
Wang JX (Wang Junxi)
;
Ran JX (Ran Junxue)
;
Li HP (Li Hanping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang, Zhanguo)
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(315Kb)
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View/Download:1449/493
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Submit date:2010/03/29
2deg
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:
Wang XY (Wang, Xiaoyan)
;
Wang XL (Wang, Xiaoliang)
;
Hu GX (Hu, Guoxin)
;
Wang BZ (Wang, Baozhu)
;
Ma ZY (Ma, Zhiyong)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Ran JX (Ran, Junxue)
;
Li JP (Li, Jianping)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
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Submit date:2010/03/29
Alxga1-xn