SEMI OpenIR

Browse/Search Results:  1-10 of 81 Help

Selected(0)Clear Items/Page:    Sort:
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 8, 页码: 085310
Authors:  Liang, SH;  Zhang, TT;  Barate, P;  Frougier, J;  Vidal, M;  Renucci, P;  Xu, B;  Jaffres, H;  George, JM;  Devaux, X;  Hehn, M;  Marie, X;  Mangin, S;  Yang, HX;  Hallal, A;  Chshiev, M;  Amand, T;  Liu, HF;  Liu, DP;  Han, XF;  Wang, ZG;  Lu, Y
Adobe PDF(1652Kb)  |  Favorite  |  View/Download:443/42  |  Submit date:2015/03/25
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 24, 页码: 241111
Authors:  Zhang, L;  Wei, XC;  Liu, NX;  Lu, HX;  Zeng, JP;  Wang, JX;  Zeng, YP;  Li, JM;  Zhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn
Adobe PDF(1398Kb)  |  Favorite  |  View/Download:1245/411  |  Submit date:2012/02/06
Algan/gan Heterostructures  Transport-properties  
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 10, 页码: Art. No. 100201
Authors:  Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Liu NX (Liu Naixin);  Lu HX (Lu Hongxi);  Zeng YP (Zeng Yiping);  Wang GH (Wang Guohong);  Li JM (Li Jinmin);  Wei, TB, Chinese AcadSci, InstSemicond, Semicond Lighting Technol Res &DevCtr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
Adobe PDF(437Kb)  |  Favorite  |  View/Download:1443/431  |  Submit date:2010/11/14
Low-temperature Activation  Films  
Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique 期刊论文
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2009, 卷号: 6, 期号: 2, 页码: 354-358
Authors:  Liu W;  Meng XQ;  Qiao HX;  Xie RH;  Liu W Wuhan Univ Dept Phys Wuhan 430072 Peoples R China.
Adobe PDF(406Kb)  |  Favorite  |  View/Download:918/237  |  Submit date:2010/03/08
Quantum Dot  Effective Mass Theory  B-spline  
集合划分问题的分布估计求解 期刊论文
计算机工程与应用, 2009, 卷号: 45, 期号: 10, 页码: 130-132
Authors:  刘蕾;  鲁华祥
Adobe PDF(202Kb)  |  Favorite  |  View/Download:745/312  |  Submit date:2010/11/23
用MBE外延InAlGaN单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王保柱;  王晓亮;  王晓燕;  王新华;  肖红领;  王军喜;  刘宏新
Adobe PDF(344Kb)  |  Favorite  |  View/Download:842/189  |  Submit date:2009/06/11
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Authors:  Lin, GQ;  Zeng, YP;  Wang, XL;  Liu, HX;  Lin, GQ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lingq@semi.ac.cn
Adobe PDF(642Kb)  |  Favorite  |  View/Download:1161/276  |  Submit date:2010/03/08
Rheed  Interlayer  Pressure  Nitrides  Layers  Mbe  
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com
Adobe PDF(261Kb)  |  Favorite  |  View/Download:1221/471  |  Submit date:2010/03/08
Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)  
以金属为缓冲层在Si(111)上分子束外延GaN及其表征 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1998-2002
Authors:  林郭强;  曾一平;  王晓亮;  刘宏新
Adobe PDF(907Kb)  |  Favorite  |  View/Download:856/301  |  Submit date:2010/11/23
在硅衬底上生长无裂纹氮化镓薄膜的方法 专利
专利类型: 发明, 申请日期: 2007-05-23, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  李晋闽;  王军喜;  王晓亮;  王启元;  刘宏新;  王俊;  曾一平
Adobe PDF(429Kb)  |  Favorite  |  View/Download:921/227  |  Submit date:2009/06/11