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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 4, 页码: 043702
Authors:  Jin, DD;  Wang, LS;  Yang, SY;  Zhang, LW;  Li, HJ;  Zhang, H;  Wang, JX;  Xiang, RF;  Wei, HY;  Jiao, CM;  Liu, XL;  Zhu, QS;  Wang, ZG
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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 026801
Authors:  Wang, JX;  Wang, LS;  Yang, SY;  Li, HJ;  Zhao, GJ;  Zhang, H;  Wei, HY;  Jiao, CM;  Zhu, QS;  Wang, ZG
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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2014, 卷号: 9, 页码: 470
Authors:  Sang, L;  Zhu, QS;  Yang, SY;  Liu, GP;  Li, HJ;  Wei, HY;  Jiao, CM;  Liu, SM;  Wang, ZG;  Zhou, XW;  Mao, W;  Hao, Y;  Shen, B
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 19, 页码: 193704
Authors:  Li, HJ;  Zhao, GJ;  Liu, GP;  Wei, HY;  Jiao, CM;  Yang, SY;  Wang, LS;  Zhu, QS
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 卷号: 605, 页码: 113-117
Authors:  Li, W;  Wang, XL;  Qu, SQ;  Wang, Q;  Xiao, HL;  Wang, CM;  Peng, EC;  Hou, X;  Wang, ZG
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:  Kang, H;  Wang, Q;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Wang, XL;  Wang, ZG;  Hou, X
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