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SnO2@TiO2 Heterojunction Nanostructures for Lithium-Ion Batteries and Self-Powered UV Photodetectors with Improved Performances 期刊论文
CHEMELECTROCHEM, 2014, 卷号: 1, 期号: 1, 页码: 108-115
Authors:  Hou, XJ;  Wang, XF;  Liu, B;  Wang, QF;  Wang, ZR;  Chen, D;  Shen, GZ
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Spray-Painted Binder-Free SnSe Electrodes for High-Performance Energy-Storage Devices 期刊论文
CHEMSUSCHEM, 2014, 卷号: 7, 期号: 1, 页码: 308-313
Authors:  Wang, XF;  Liu, B;  Xiang, QY;  Wang, QF;  Hou, XJ;  Chen, D;  Shen, GZ
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Core-Shell CuCo2O4@MnO2 Nanowires on Carbon Fabrics as High-Performance Materials for Flexible, All-Solid-State, Electrochemical Capacitors 期刊论文
CHEMELECTROCHEM, 2014, 卷号: 1, 期号: 3, 页码: 559-564
Authors:  Wang, QF;  Xu, J;  Wang, XF;  Liu, B;  Hou, XJ;  Yu, G;  Wang, P;  Chen, D;  Shen, GZ
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Ultralong-life and high-rate web-like Li4Ti5O12 anode for high-performance flexible lithium-ion batteries 期刊论文
NANO RESEARCH, 2014, 卷号: 7, 期号: 7, 页码: 1073-1082
Authors:  Wang, XF;  Liu, B;  Hou, XJ;  Wang, QF;  Li, WW;  Chen, D;  Shen, GZ
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Fiber-Based Flexible All-Solid-State Asymmetric Supercapacitors for Integrated Photodetecting System 期刊论文
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2014, 卷号: 53, 期号: 7, 页码: 1849-1853
Authors:  Wang, XF;  Liu, B;  Liu, R;  Wang, QF;  Hou, XJ;  Chen, D;  Wang, RM;  Shen, GZ
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Hierarchical MnCo2O4 nanosheet arrays/carbon cloths as integrated anodes for lithium-ion batteries with improved performance 期刊论文
NANOSCALE, 2014, 卷号: 6, 期号: 15, 页码: 8858-8864
Authors:  Hou, XJ;  Wang, XF;  Liu, B;  Wang, QF;  Luo, T;  Chen, D;  Shen, GZ
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Flexible coaxial-type fiber supercapacitor based on NiCo2O4 nanosheets electrodes 期刊论文
NANO ENERGY, 2014, 卷号: 8, 页码: 44-51
Authors:  Wang, QF;  Wang, XF;  Xu, J;  Ouyang, X;  Hou, XJ;  Chen, D;  Wang, RM;  Shen, GZ
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Low temperature characteristics of AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 56, 期号: 1, 页码: 10101
Authors:  Lin DF (Lin D. F.);  Wang XL (Wang X. L.);  Xiao HL (Xiao H. L.);  Wang CM (Wang C. M.);  Qiang LJ (Qiang L. J.);  Feng C (Feng C.);  Chen H (Chen H.);  Hou QF (Hou Q. F.);  Deng QW (Deng Q. W.);  Bi Y (Bi Y.);  Kang H (Kang H.)
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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Authors:  Wei, M;  Wang, XL;  Pan, X;  Xiao, HL;  Wang, CM;  Hou, QF;  Wang, ZG;  Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, POB 912, Beijing 100083, Peoples R China,mengw@semi.ac.cn
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Gan  Mocvd  Si(111)  Aln  Vapor-phase Epitaxy  Layers  Substrate  Mocvd  Stress  
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.48102
Authors:  Wei M;  Wang XL;  Xiao HL;  Wang CM;  Pan X;  Hou QF;  Wang ZG;  Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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Electron-mobility Transistors  Al-content  Stress-control  Phase Epitaxy  Algan  Buffer  Layers  Heterostructures  Interlayers  Silicon