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中国科学院半导体研究所机构知识库
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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Yan, JD
;
Peng, EC
;
Kang, H
;
Wang, ZG
;
Hou, X
Adobe PDF(876Kb)
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View/Download:849/221
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Submit date:2015/03/20
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Hou, X
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Peng, EC
;
Kang, H
;
Wang, ZG
Adobe PDF(1006Kb)
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View/Download:441/70
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Submit date:2015/04/02
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:
Yan, JD
;
Wang, XL
;
Wang, Q
;
Qu, SQ
;
Xiao, HL
;
Peng, EC
;
Kang, H
;
Wang, CM
;
Feng, C
;
Yin, HB
;
Jiang, LJ
;
Li, BQ
;
Wang, ZG
;
Hou, X
Adobe PDF(1281Kb)
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View/Download:590/63
  |  
Submit date:2015/03/25
High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:
Kang, H
;
Wang, Q
;
Xiao, HL
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Wang, XL
;
Wang, ZG
;
Hou, X
Adobe PDF(599Kb)
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View/Download:425/103
  |  
Submit date:2015/03/25
Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 523, 页码: 88-93
Authors:
Ding, JQ
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Feng, C
;
Jiang, LJ
Adobe PDF(1061Kb)
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View/Download:1036/351
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Submit date:2013/02/07
Raman study on dislocation in high Al content AlxGa1-xN
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 卷号: 58, 期号: 1, 页码: 10102
Authors:
Pan, X
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Feng, C
;
Jiang, LJ
;
Yin, H
;
Chen, H
Adobe PDF(308Kb)
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View/Download:1263/355
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Submit date:2013/01/29
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures
期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:
Ding JQ (Ding, Jieqin)
;
Wang XL (Wang, Xiaoliang)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Yin HB (Yin, Haibo)
;
Chen H (Chen, Hong)
;
Feng C (Feng, Chun)
;
Jiang LJ (Jiang, Lijuan)
Adobe PDF(554Kb)
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View/Download:993/286
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Submit date:2013/03/27
Surface Emitting Quantum Cascade Lasers for Sensing and Medical Diagnosis
会议论文
Proceedings of SPIE 卷: 8192 文献号: 81921P, Beijing, PEOPLES R CHINA, 2011
Authors:
Liu JQ (Liu Jun-qi)
;
Chen JY (Chen Jian-yan)
;
Liu WF (Liu Wan-feng)
;
Guo WH (Guo Wan-hong)
;
Jiang YC (Jiang Yu-chao)
;
Liu FQ (Liu Feng-qi)
;
Li L (Li Lu)
;
Wang LJ (Wang Li-jun)
;
Wang ZG (Wang Zhan-guo)
Adobe PDF(10693Kb)
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View/Download:1228/295
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Submit date:2011/12/13
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
;
Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
Adobe PDF(500Kb)
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View/Download:1719/593
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Submit date:2012/01/06
Light-emitting-diodes
Vapor-phase Epitaxy
Band-gap
Mg
Photoluminescence
Ingan
Dependence
Strain
Energy
Inn
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:
Jiang LJ
;
Wang XL
;
Xiao HL
;
Wang ZG
;
Yang CB
;
Zhang ML
Adobe PDF(712Kb)
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View/Download:1231/365
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Submit date:2011/07/07
Gan
Ferromagnetic
Implantation
Annealing