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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:  Kang, H;  Wang, Q;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Wang, XL;  Wang, ZG;  Hou, X
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Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 523, 页码: 88-93
Authors:  Ding, JQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Feng, C;  Jiang, LJ
Adobe PDF(1061Kb)  |  Favorite  |  View/Download：1036/351  |  Submit date：2013/02/07
Raman study on dislocation in high Al content AlxGa1-xN 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 卷号: 58, 期号: 1, 页码: 10102
Authors:  Pan, X;  Wang, XL;  Xiao, HL;  Wang, CM;  Feng, C;  Jiang, LJ;  Yin, H;  Chen, H
Adobe PDF(308Kb)  |  Favorite  |  View/Download：1263/355  |  Submit date：2013/01/29
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
Adobe PDF(554Kb)  |  Favorite  |  View/Download：993/286  |  Submit date：2013/03/27
Surface Emitting Quantum Cascade Lasers for Sensing and Medical Diagnosis 会议论文
Proceedings of SPIE 卷: 8192 文献号: 81921P, Beijing, PEOPLES R CHINA, 2011
Authors:  Liu JQ (Liu Jun-qi);  Chen JY (Chen Jian-yan);  Liu WF (Liu Wan-feng);  Guo WH (Guo Wan-hong);  Jiang YC (Jiang Yu-chao);  Liu FQ (Liu Feng-qi);  Li L (Li Lu);  Wang LJ (Wang Li-jun);  Wang ZG (Wang Zhan-guo)
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Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
Adobe PDF(500Kb)  |  Favorite  |  View/Download：1719/593  |  Submit date：2012/01/06
Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Yang CB;  Zhang ML
Adobe PDF(712Kb)  |  Favorite  |  View/Download：1231/365  |  Submit date：2011/07/07
Gan  Ferromagnetic  Implantation  Annealing