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在硅衬底上生长的氮化镓薄膜结构及其生长方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  王晓亮;  罗卫军;  郭伦春;  肖红领;  李建平;  李晋闽 
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氮化镓基双异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-07-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  冉学军;  肖红领;  王翠梅;  胡国新;  唐健;  罗卫军
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氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马志勇;  王晓亮;  冉军学;  胡国新;  肖红领;  王翠梅;  罗卫军
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宽带隙氮化镓基异质结场效应晶体管结构及制作方法 专利
专利类型: 发明, 申请日期: 2008-03-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  马志勇;  胡国新;  肖红领;  冉军学;  王翠梅;  罗卫军
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AlGaN/GaN HEMT材料及微波功率器件研究 学位论文
, 北京: 中国科学院半导体研究所, 2008
Authors:  罗卫军
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1654-1656
Authors:  Chen Zhigang;  Zhang Yang;  Luo Weijun;  Zhang Renping;  Yang Fuhua;  Wang Xiaoliang;  Li Jinmin
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Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Authors:  Luo WJ (Luo Weijun);  Wei K (Wei Ke);  Chen XJ (Chen Xiaojuan);  Li CZ (Li Chengzhan);  Liu XY (Liu Xinyu);  Wang XL (Wang Xiaoliang);  Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
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AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Authors:  Yao Xiaojiang;  Li Bin;  Chen Yanhu;  Chen Xiaojuan;  Wei Ke;  Li Chengzhan;  Luo Weijun;  WANG Xiaoliang;  Liu Dan;  Liu Guoguo;  Liu Xinyu
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高性能1mm SiC基AlGaN/GaN功率HEMT研制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1981-1983
Authors:  罗卫军;  陈晓娟;  李成瞻;  刘新宇;  和致经;  魏珂;  梁晓新;  王晓亮
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A Radial Stub Test Circuit for Microwave Power Devices 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1557-1561
Authors:  Luo Weijun;  Chen Xiaojuan;  Liang Xiaoxin;  Ma Xiaolin;  Liu Xinyu;  Wang Xiaoliang
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