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Effective absorption enhancement in small molecule organic solar cells using trapezoid gratings 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 3, 页码: 038803
Authors:  Xiang, CP;  Jin, Y;  Liu, JT;  Xu, BZ;  Wang, WM;  Wei, X;  Song, GF;  Xu, Y
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Multiple Surface Plasmon Resonances in Compound Structure with Metallic Nanoparticle and Nanohole Arrays 期刊论文
Multiple Surface Plasmon Resonances in Compound Structure with Metallic Nanoparticle and Nanohole Arrays, 2012, 卷号: 7, 期号: 4, 页码: 659-663
Authors:  Wang LN (Wang, Lina);  Xu BZ (Xu, Binzong);  Bai WL (Bai, Wenli);  Zhang J (Zhang, Jing);  Cai LK (Cai, Likang);  Hu HF (Hu, Haifeng);  Song GF (Song, Guofeng)
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Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE 期刊论文
JOURNAL OF INORGANIC MATERIALS, 2009, 卷号: 24, 期号: 3, 页码: 559-562
Authors:  Wang BZ;  Wang XL;  Wang BZ Hebei Univ Sci & Technol Inst Informat Sci & Technol Shijiazhuang 050018 Peoples R China. E-mail Address: wangbz@semi.ac.cn
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Alingan  Rf-mbe  Structural Properties  Optical Properties  
一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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用MBE外延InAlGaN单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王保柱;  王晓亮;  王晓燕;  王新华;  肖红领;  王军喜;  刘宏新
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The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Authors:  Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX;  Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
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Gan  Hemt  2deg  Mobility  Polarization  
Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 1, 页码: 266-269
Authors:  Wang, XH;  Wang, XL;  Feng, C;  Xiao, HL;  Yang, CB;  Wang, JX;  Wang, BZ;  Ran, JX;  Wang, CM;  Wang, XH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn
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Gas Sensors  Hemt Structures  Mobility  Transistors  Temperature  Surfaces  Pt/gan  Growth  Pd/gan  Mocvd  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
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Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
Hydrogen sensors based on AlGaN/AIN/GaN HEMT 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 1, 页码: 20-23
Authors:  Wang, XH;  Wang, XL;  Feng, C;  Yang, CB;  Wang, BZ;  Ran, JX;  Xiao, HL;  Wang, CM;  Wang, JX;  Wang, XH, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn
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Algan/ain/gan Hemt  Hydrogen Sensor  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  Favorite  |  View/Download:1338/523  |  Submit date:2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode