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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
Physica B: Condensed Matter, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin;  Hou, Xun
Adobe PDF(621Kb)  |  Favorite  |  View/Download：585/150  |  Submit date：2014/04/28
High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
Adobe PDF(1409Kb)  |  Favorite  |  View/Download：561/150  |  Submit date：2014/03/18
Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004
Authors:  Jing, Liang;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Li, Zhidong;  Ding, Jieqin;  Wang, Zhanguo;  Hou, Xun
Adobe PDF(286Kb)  |  Favorite  |  View/Download：463/78  |  Submit date：2014/04/28
Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin
Adobe PDF(621Kb)  |  Favorite  |  View/Download：845/337  |  Submit date：2013/09/17
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
Adobe PDF(1092Kb)  |  Favorite  |  View/Download：1074/276  |  Submit date：2013/03/26
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
Adobe PDF(554Kb)  |  Favorite  |  View/Download：993/286  |  Submit date：2013/03/27
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding, Jieqin;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Chen, Hong;  Bi, Yang;  Deng, Qinwen;  Zhang, Jingwen;  Hou, Xun
Adobe PDF(1209Kb)  |  Favorite  |  View/Download：814/186  |  Submit date：2013/04/19
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
Authors:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  Favorite  |  View/Download：2092/494  |  Submit date：2011/07/15
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  Favorite  |  View/Download：2587/831  |  Submit date：2011/07/17
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(324Kb)  |  Favorite  |  View/Download：1082/370  |  Submit date：2012/06/14
Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas