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Growth temperature dependences of InN films grown by MOCVD
Yang, CB; Wang, XL; Xiao, HL; Zhang, XB; Hua, GX; Ran, JX; Wang, CM; Li, JP; Li, JM; Wang, ZG; Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
2008
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume255Issue:5Pages:3149-3152 Part 2
AbstractWe investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.
metadata_83[yang, cuibai; wang, xiaoliang; xiao, hongling; zhang, xiaobin; hua, guoxin; ran, junxue; wang, cuimei; li, jianping; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china; [wang, xiaoliang; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordInn Mocvd Mobility
Subject Area半导体化学
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences YYYJ-070102 National Nature Sciences Foundation of China 60576046 60606002State Key Development Program for Basic Research of China 2006CB604905 513270605This work was supported by the Knowledge Innovation Engineering of Chinese Academy of Sciences (No. YYYJ-070102); the National Nature Sciences Foundation of China (No. 60576046, 60606002); and the State Key Development Program for Basic Research of China (Nos. 2006CB604905 and 513270605).
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6330
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorYang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
Recommended Citation
GB/T 7714
Yang, CB,Wang, XL,Xiao, HL,et al. Growth temperature dependences of InN films grown by MOCVD[J]. APPLIED SURFACE SCIENCE,2008,255(5):3149-3152 Part 2.
APA Yang, CB.,Wang, XL.,Xiao, HL.,Zhang, XB.,Hua, GX.,...&Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn.(2008).Growth temperature dependences of InN films grown by MOCVD.APPLIED SURFACE SCIENCE,255(5),3149-3152 Part 2.
MLA Yang, CB,et al."Growth temperature dependences of InN films grown by MOCVD".APPLIED SURFACE SCIENCE 255.5(2008):3149-3152 Part 2.
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