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具有背势垒的GaN基HEMT研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  彭恩超
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氮化镓  异质结  高电子迁移率晶体管  二维电子气  背势垒  
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 卷号: 605, 页码: 113-117
Authors:  Li, W;  Wang, XL;  Qu, SQ;  Wang, Q;  Xiao, HL;  Wang, CM;  Peng, EC;  Hou, X;  Wang, ZG
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The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi Y;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Peng EC;  Lin DF;  Feng C;  Jiang LJ;  Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
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2-dimensional Electron-gas  Algan/gan/ingan/gan Dh-hemts  Millimeter-wave Applications  Field-effect Transistors  Heterojunction Fets  Heterostructures  Passivation  Confinement  Performance  Barriers  
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 55, 期号: 1, 页码: 10102
Authors:  Bi Y;  Wang XL;  Xiao HL;  Wang CM;  Peng EC;  Lin DF;  Feng C;  Jiang LJ;  Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn
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Algan/gan/ingan/gan Dh-hemts  Field-effect Transistors  Algan/gan  Polarization  Passivation  Hfets  Ghz  
具有复合空间层的氮化镓场效应晶体管结构及制作方法 专利
专利类型: 发明, 公开日期: 2013-05-22
Inventors:  王翠梅;  王晓亮;  彭恩超;  肖红领;  冯春;  姜丽娟;  陈竑
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双异质结构氮化镓基高电子迁移率晶体管结构及制作 方法 专利
专利类型: 发明, 公开日期: 2012-12-26
Inventors:  王晓亮;  王翠梅;  肖红领;  彭恩超;  冯春;  姜丽娟;  陈竑
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铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法 专利
专利类型: 发明, 公开日期: 2013-02-13
Inventors:  王晓亮;  彭恩超;  王翠梅;  肖红领;  冯春;  姜丽娟;  陈竑
Adobe PDF(535Kb)  |  Favorite  |  View/Download：487/94  |  Submit date：2014/10/24