×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中科院半导体材料科学... [9]
半导体材料科学中心 [2]
Authors
林德峰 [1]
彭恩超 [1]
毕杨 [1]
Document Type
Journal ar... [6]
Patent [4]
Thesis [1]
Date Issued
2014 [5]
2011 [2]
Language
英语 [5]
Source Publication
EUROPEAN P... [3]
APPLIED PH... [1]
JOURNAL OF... [1]
JOURNAL OF... [1]
Funding Project
Indexed By
SCI [6]
Funding Organization
Knowledge ... [2]
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
Browse/Search Results:
1-10 of 11
Help
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Submit date Ascending
Submit date Descending
Title Ascending
Title Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Author Ascending
Author Descending
Issue Date Ascending
Issue Date Descending
具有背势垒的GaN基HEMT研究
学位论文
, 北京: 中国科学院研究生院, 2014
Authors:
彭恩超
Adobe PDF(8944Kb)
  |  
Favorite
  |  
View/Download:874/90
  |  
Submit date:2014/06/05
氮化镓
异质结
高电子迁移率晶体管
二维电子气
背势垒
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Yan, JD
;
Peng, EC
;
Kang, H
;
Wang, ZG
;
Hou, X
Adobe PDF(876Kb)
  |  
Favorite
  |  
View/Download:861/221
  |  
Submit date:2015/03/20
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Hou, X
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Peng, EC
;
Kang, H
;
Wang, ZG
Adobe PDF(1006Kb)
  |  
Favorite
  |  
View/Download:457/70
  |  
Submit date:2015/04/02
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:
Yan, JD
;
Wang, XL
;
Wang, Q
;
Qu, SQ
;
Xiao, HL
;
Peng, EC
;
Kang, H
;
Wang, CM
;
Feng, C
;
Yin, HB
;
Jiang, LJ
;
Li, BQ
;
Wang, ZG
;
Hou, X
Adobe PDF(1281Kb)
  |  
Favorite
  |  
View/Download:596/63
  |  
Submit date:2015/03/25
Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 卷号: 605, 页码: 113-117
Authors:
Li, W
;
Wang, XL
;
Qu, SQ
;
Wang, Q
;
Xiao, HL
;
Wang, CM
;
Peng, EC
;
Hou, X
;
Wang, ZG
Adobe PDF(786Kb)
  |  
Favorite
  |  
View/Download:511/113
  |  
Submit date:2015/03/25
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:
Bi Y
;
Wang XL
;
Yang CB
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
;
Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
Adobe PDF(385Kb)
  |  
Favorite
  |  
View/Download:1248/270
  |  
Submit date:2011/09/14
2-dimensional Electron-gas
Algan/gan/ingan/gan Dh-hemts
Millimeter-wave Applications
Field-effect Transistors
Heterojunction Fets
Heterostructures
Passivation
Confinement
Performance
Barriers
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 55, 期号: 1, 页码: 10102
Authors:
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
;
Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn
Adobe PDF(1385Kb)
  |  
Favorite
  |  
View/Download:1302/370
  |  
Submit date:2012/01/06
Algan/gan/ingan/gan Dh-hemts
Field-effect Transistors
Algan/gan
Polarization
Passivation
Hfets
Ghz
具有复合空间层的氮化镓场效应晶体管结构及制作方法
专利
专利类型: 发明, 公开日期: 2013-05-22
Inventors:
王翠梅
;
王晓亮
;
彭恩超
;
肖红领
;
冯春
;
姜丽娟
;
陈竑
Adobe PDF(582Kb)
  |  
Favorite
  |  
View/Download:385/80
  |  
Submit date:2014/12/25
双异质结构氮化镓基高电子迁移率晶体管结构及制作 方法
专利
专利类型: 发明, 公开日期: 2012-12-26
Inventors:
王晓亮
;
王翠梅
;
肖红领
;
彭恩超
;
冯春
;
姜丽娟
;
陈竑
Adobe PDF(568Kb)
  |  
Favorite
  |  
View/Download:443/98
  |  
Submit date:2014/10/31
铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法
专利
专利类型: 发明, 公开日期: 2013-02-13
Inventors:
王晓亮
;
彭恩超
;
王翠梅
;
肖红领
;
冯春
;
姜丽娟
;
陈竑
Adobe PDF(535Kb)
  |  
Favorite
  |  
View/Download:487/94
  |  
Submit date:2014/10/24