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The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ; Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn
2011
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN1286-0042
Volume55Issue:1Pages:10102
AbstractThis is a theoretical study of the InGaN back-barrier on the properties of the Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices.
metadata_83半导体材料科学中心
KeywordAlgan/gan/ingan/gan Dh-hemts Field-effect Transistors Algan/gan Polarization Passivation Hfets Ghz
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02]; National Nature Sciences Foundation of China[60890193, 60906006]; State Key Development Program for Basic Research of China[2006CB604905, 2010CB327503]; Chinese Academy of Sciences[ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Language英语
Date Available2012-01-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22663
Collection半导体材料科学中心
Corresponding AuthorBi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, ybi@semi.ac.cn
Recommended Citation
GB/T 7714
Bi Y,Wang XL,Xiao HL,et al. The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):10102.
APA Bi Y.,Wang XL.,Xiao HL.,Wang CM.,Peng EC.,...&Bi, Y .(2011).The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(1),10102.
MLA Bi Y,et al."The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.1(2011):10102.
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