SEMI OpenIR  > 中科院半导体材料科学重点实验室
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG
2014
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
Volume66Issue:2Pages:20101
Subject Area半导体材料
Indexed BySCI
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26312
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Qu, SQ,Wang, XL,Xiao, HL,et al. Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2014,66(2):20101.
APA Qu, SQ.,Wang, XL.,Xiao, HL.,Hou, X.,Wang, CM.,...&Wang, ZG.(2014).Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,66(2),20101.
MLA Qu, SQ,et al."Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 66.2(2014):20101.
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