| Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation | |
| Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X | |
| 2014 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 116Issue:5Pages:054502 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26241 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yan, JD,Wang, XL,Wang, Q,et al. Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation[J]. JOURNAL OF APPLIED PHYSICS,2014,116(5):054502. |
| APA | Yan, JD.,Wang, XL.,Wang, Q.,Qu, SQ.,Xiao, HL.,...&Hou, X.(2014).Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation.JOURNAL OF APPLIED PHYSICS,116(5),054502. |
| MLA | Yan, JD,et al."Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation".JOURNAL OF APPLIED PHYSICS 116.5(2014):054502. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Two-dimensional elec（1281KB） | 限制开放 | License | Application Full Text | |||
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