SEMI OpenIR  > 中科院半导体材料科学重点实验室
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation
Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume116Issue:5Pages:054502
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26241
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yan, JD,Wang, XL,Wang, Q,et al. Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation[J]. JOURNAL OF APPLIED PHYSICS,2014,116(5):054502.
APA Yan, JD.,Wang, XL.,Wang, Q.,Qu, SQ.,Xiao, HL.,...&Hou, X.(2014).Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation.JOURNAL OF APPLIED PHYSICS,116(5),054502.
MLA Yan, JD,et al."Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation".JOURNAL OF APPLIED PHYSICS 116.5(2014):054502.
Files in This Item:
File Name/Size DocType Version Access License
Two-dimensional elec(1281KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yan, JD]'s Articles
[Wang, XL]'s Articles
[Wang, Q]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yan, JD]'s Articles
[Wang, XL]'s Articles
[Wang, Q]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yan, JD]'s Articles
[Wang, XL]'s Articles
[Wang, Q]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.