| Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT | |
| Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X | |
| 2014 | |
| Source Publication | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
 |
| Volume | 68Issue:1Pages:10105 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26123 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Qu, SQ,Wang, XL,Xiao, HL,et al. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2014,68(1):10105. |
| APA | Qu, SQ.,Wang, XL.,Xiao, HL.,Wang, CM.,Jiang, LJ.,...&Hou, X.(2014).Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,68(1),10105. |
| MLA | Qu, SQ,et al."Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 68.1(2014):10105. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Analysis of GaN cap （876KB） | 限制开放 | License | Application Full Text | |||
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