SEMI OpenIR  > 中科院半导体材料科学重点实验室
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X
2014
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
Volume68Issue:1Pages:10105
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26123
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Qu, SQ,Wang, XL,Xiao, HL,et al. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2014,68(1):10105.
APA Qu, SQ.,Wang, XL.,Xiao, HL.,Wang, CM.,Jiang, LJ.,...&Hou, X.(2014).Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,68(1),10105.
MLA Qu, SQ,et al."Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 68.1(2014):10105.
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