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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets 期刊论文
Nano Letters, 2016, 卷号: 16, 期号: 2, 页码: 834-841
Authors:  D. Pan;  D. X. Fan;  N. Kang;  J. H. Zhi;  X. Z. Yu;  H. Q. Xu;  J. H. Zhao
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大功率及高转换效率2.1μm GaInSb/AlGaAsSb量子阱激光器 期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 66-70
Authors:  宋玉志;  宋甲坤;  张祖银;  李康文;  徐云;  宋国峰;  陈良惠
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利用纳秒激光提高铜表面吸光率的研究 期刊论文
中国激光, 2016, 卷号: 43, 期号: 3, 页码: 58-65
Authors:  任乃飞;  林康;  张志研;  梁浩;  高文焱;  王奕博;  林学春
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Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles 期刊论文
Applied Surface Science, 2016, 卷号: 388, 页码: 584-588
Authors:  H.L. Kang;  J.B. Lao;  Z.P. Li;  W.Q. Yao;  C. Liu;  J.Y. Wang
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Phase-coherent transport and spin-orbit interaction in InAs nanowires grown by molecule-beam epitaxy 期刊论文
Applied Physics Letters, 2015, 卷号: 106, 页码: 173105
Authors:  L. B. Wang;  J. K. Guo;  N. Kang;  Dong Pan;  Sen Li;  Dingxun Fan;  Jianhua Zhao;  H. Q. Xu
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AlGaN/GaN基电力电子器件制备与性能研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  康贺
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Space Program SJ-10 of Microgravity Research 期刊论文
MICROGRAVITY SCIENCE AND TECHNOLOGY, 2014, 卷号: 26, 期号: 3, 页码: 159-169
Authors:  Hu, WR;  Zhao, JF;  Long, M;  Zhang, XW;  Liu, QS;  Hou, MY;  Kang, Q;  Wang, YR;  Xu, SH;  Kong, WJ;  Zhang, H;  Wang, SF;  Sun, YQ;  Hang, HY;  Huang, YP;  Cai, WM;  Zhao, Y;  Dai, JW;  Zheng, HQ;  Duan, EK;  Wang, JF
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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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