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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Coexistence of induced superconductivity and quantum Hall states in InSb nanosheets
期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99, 页码: 245302
Authors:
Jinhua Zhi
;
Ning Kang
;
Feifan Su
;
Dingxun Fan
;
Sen Li
;
Dong Pan
;
S. P. Zhao
;
Jianhua Zhao
;
H. Q. Xu
Adobe PDF(1388Kb)
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View/Download:34/0
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Submit date:2020/07/31
Crossover from Coulomb blockade to ballistic transport in InAs nanowire devices
期刊论文
Nanotechnology, 2019, 卷号: 30, 页码: 124001
Authors:
L B Wang
;
Dong Pan
;
G Y Huang
;
Jianhua Zhao
;
N Kang
;
H Q Xu
Adobe PDF(844Kb)
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View/Download:24/0
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Submit date:2020/07/30
Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets
期刊论文
Nano Letters, 2016, 卷号: 16, 期号: 2, 页码: 834-841
Authors:
D. Pan
;
D. X. Fan
;
N. Kang
;
J. H. Zhi
;
X. Z. Yu
;
H. Q. Xu
;
J. H. Zhao
Adobe PDF(8889Kb)
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View/Download:296/1
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Submit date:2017/03/16
大功率及高转换效率2.1μm GaInSb/AlGaAsSb量子阱激光器
期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 66-70
Authors:
宋玉志
;
宋甲坤
;
张祖银
;
李康文
;
徐云
;
宋国峰
;
陈良惠
Adobe PDF(420Kb)
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Submit date:2017/03/16
利用纳秒激光提高铜表面吸光率的研究
期刊论文
中国激光, 2016, 卷号: 43, 期号: 3, 页码: 58-65
Authors:
任乃飞
;
林康
;
张志研
;
梁浩
;
高文焱
;
王奕博
;
林学春
Adobe PDF(4440Kb)
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View/Download:380/5
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Submit date:2017/03/16
Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles
期刊论文
Applied Surface Science, 2016, 卷号: 388, 页码: 584-588
Authors:
H.L. Kang
;
J.B. Lao
;
Z.P. Li
;
W.Q. Yao
;
C. Liu
;
J.Y. Wang
Adobe PDF(2037Kb)
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View/Download:275/1
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Submit date:2017/03/10
Phase-coherent transport and spin-orbit interaction in InAs nanowires grown by molecule-beam epitaxy
期刊论文
Applied Physics Letters, 2015, 卷号: 106, 页码: 173105
Authors:
L. B. Wang
;
J. K. Guo
;
N. Kang
;
Dong Pan
;
Sen Li
;
Dingxun Fan
;
Jianhua Zhao
;
H. Q. Xu
Adobe PDF(1652Kb)
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View/Download:279/1
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Submit date:2016/03/29
AlGaN/GaN基电力电子器件制备与性能研究
学位论文
, 北京: 中国科学院研究生院, 2014
Authors:
康贺
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View/Download:889/97
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Submit date:2014/06/05
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Yan, JD
;
Peng, EC
;
Kang, H
;
Wang, ZG
;
Hou, X
Adobe PDF(876Kb)
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View/Download:861/221
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Submit date:2015/03/20
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:
Qu, SQ
;
Wang, XL
;
Xiao, HL
;
Hou, X
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Peng, EC
;
Kang, H
;
Wang, ZG
Adobe PDF(1006Kb)
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View/Download:457/70
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Submit date:2015/04/02