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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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High performance AlGaNGaN power switch with Si3N4 Insulation
期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:
Lin, Defeng
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Kang, He
;
Wang, Cuimei
;
Jiang, Lijuan
;
Feng, Chun
;
Chen, Hong
;
Deng, Qingwen
;
Bi, Yang
;
Zhang, Jingwen
;
Hou, Xun
Adobe PDF(1409Kb)
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Submit date:2014/03/18
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures
期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:
Ding JQ (Ding, Jieqin)
;
Wang XL (Wang, Xiaoliang)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Yin HB (Yin, Haibo)
;
Chen H (Chen, Hong)
;
Feng C (Feng, Chun)
;
Jiang LJ (Jiang, Lijuan)
Adobe PDF(554Kb)
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View/Download:993/286
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Submit date:2013/03/27
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:
Bi, Yang
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Wang, Cuimei
;
Yang, Cuibai
;
Peng, Enchao
;
Lin, Defeng
;
Feng, Chun
;
Jiang, Lijuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(324Kb)
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View/Download:1082/370
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Submit date:2012/06/14
Aluminum
Electron Mobility
Gallium Nitride
High Electron Mobility Transistors
Indium
Poisson Equation
Polarization
Two Dimensional Electron Gas
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
;
Peng, EnChao
;
Lin, DeFeng
;
Feng, Chun
;
Jiang, LiJuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(385Kb)
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View/Download:1298/296
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Submit date:2012/06/14
Poisson Equation
一种制备稀磁半导体薄膜的方法
专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期:
Inventors:
姜丽娟
Adobe PDF(365Kb)
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Submit date:2010/03/19
GaN基高居里温度稀磁半导体的制备和性能研究
学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:
姜丽娟
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View/Download:660/27
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Submit date:2009/04/13
制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法
专利
专利类型: 发明, 专利号: CN200810226288.9, 公开日期: 2011-08-31
Inventors:
王晓亮
;
张明兰
;
肖红领
;
王翠梅
;
唐健
;
冯春
;
姜丽娟
Adobe PDF(404Kb)
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View/Download:1212/283
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Submit date:2011/08/31
氮化镓基高电子迁移率晶体管及制作方法
专利
专利类型: 发明, 专利号: CN102427084A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:
王晓亮
;
毕杨
;
王翠梅
;
肖红领
;
冯春
;
姜丽娟
;
陈竑
Adobe PDF(570Kb)
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View/Download:1739/447
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Submit date:2012/08/29
基于GaN基异质结构的二极管结构及制作方法
专利
专利类型: 发明, 公开日期: 2014-07-02
Inventors:
康贺
;
王晓亮
;
肖红领
;
王翠梅
;
冯春
;
姜丽娟
;
殷海波
;
崔磊
Adobe PDF(566Kb)
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View/Download:455/108
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Submit date:2014/11/24
应用于电化学测量的便携式阻抗谱分析仪及阻抗谱分析方法
专利
专利类型: 发明, 公开日期: 2013-06-12
Inventors:
蒋莉娟
;
俞海龙
;
韩伟静
Adobe PDF(771Kb)
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View/Download:328/70
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Submit date:2014/12/25