×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
集成光电子学国家重... [37]
中科院半导体材料科... [30]
半导体超晶格国家重... [29]
半导体材料科学中心 [11]
纳米光电子实验室 [10]
光电系统实验室 [7]
More...
Authors
毕杨 [2]
孙陆 [1]
谭海仁 [1]
游经碧 [1]
邓庆文 [1]
侯奇峰 [1]
More...
Document Type
Journal ... [139]
Date Issued
2011 [139]
Language
英语 [119]
Unspecifie... [2]
Source Publication
APPLIED P... [16]
CHINESE P... [12]
JOURNAL OF... [8]
JOURNAL OF... [7]
LASER PHYS... [6]
CHINESE PH... [5]
More...
Funding Project
Indexed By
SCI [139]
Funding Organization
Knowledge ... [5]
National N... [3]
National N... [3]
Chinese Ac... [2]
National B... [2]
National B... [2]
More...
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
Browse/Search Results:
1-10 of 139
Help
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Submit date Ascending
Submit date Descending
Title Ascending
Title Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Author Ascending
Author Descending
Issue Date Ascending
Issue Date Descending
Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 8, 页码: 83920
Authors:
Gupta, S
;
Zaidi, T
;
Melton, A
;
Malguth, E
;
Yu, HB
;
Liu, ZQ
;
Liu, XT
;
Schwartz, J
;
Ferguson, IT
;
Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
Adobe PDF(1575Kb)
  |  
Favorite
  |  
View/Download:932/244
  |  
Submit date:2012/02/06
Ferromagnetic Properties
Semiconductors
Gan
Gagdn
Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 42, 页码: 425103
Authors:
Lang, XL
;
Xia, JB
;
Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn
;
xiajb@semi.ac.cn
Adobe PDF(218Kb)
  |  
Favorite
  |  
View/Download:833/230
  |  
Submit date:2012/01/06
Gasb Super-lattice
Semiconductor Heterostructures
Deformation Potentials
Ii Superlattices
Band Parameters
Detectors
Approximation
Transitions
Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 26, 页码: 262501
Authors:
Yu GQ
;
Chen L
;
Rizwan S
;
Zhao JH
;
Xu K
;
Han XF
;
Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn
Adobe PDF(923Kb)
  |  
Favorite
  |  
View/Download:951/241
  |  
Submit date:2012/01/06
Temperature
(Ga
Ga1-xmnxas
Mn)As
Transport
Epilayers
Films
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 520
Authors:
Ye, HQ
;
Hu, CC
;
Wang, G
;
Zhao, HM
;
Tian, HT
;
Zhang, XW
;
Wang, WX
;
Liu, BL
;
Liu, BL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China,blliu@iphy.ac.cn
Adobe PDF(253Kb)
  |  
Favorite
  |  
View/Download:970/187
  |  
Submit date:2012/01/06
Quantum Beats
Spin-orbit Coupling
Magnetic Properties Of Nanostructures
Optical Creation Of Spin Polarized
Electron G-factor
Lande G-factor
Superlattices
Spintronics
Beats
Gaas
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
;
Sheng WD
;
Liu HC
;
Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
Adobe PDF(1050Kb)
  |  
Favorite
  |  
View/Download:846/116
  |  
Submit date:2012/01/06
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Origin of the low thermal conductivity of the thermoelectric material beta-Zn(4)Sb(3): An ab initio theoretical study
期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 24, 页码: 241901
Authors:
Chen, WB
;
Li, JB
;
Chen, WB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,jbli@semi.ac.cn
Adobe PDF(1287Kb)
  |  
Favorite
  |  
View/Download:1028/275
  |  
Submit date:2012/01/06
Phonon-glass
Interstitial Zn
Zn4sb3
Energy
Zinc
A Programmable Vision Chip Based on Multiple Levels of Parallel Processors
期刊论文
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 卷号: 46, 期号: 9, 页码: 2132-2147
Authors:
Zhang WC
;
Fu QY
;
Wu NJ
;
Zhang, WC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China, nanjian@red.semi.ac.cn
Adobe PDF(3885Kb)
  |  
Favorite
  |  
View/Download:1079/223
  |  
Submit date:2012/01/06
Recognition Systems
Feature-extraction
Image
Sensor
Architecture
Design
Array
Vlsi
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
;
Wang LJ
;
Yu Y
;
Ni HQ
;
Xu YQ
;
Niu ZC
;
He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
Adobe PDF(980Kb)
  |  
Favorite
  |  
View/Download:1000/276
  |  
Submit date:2012/01/06
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
期刊论文
NANO LETTERS, 2011, 卷号: 11, 期号: 7, 页码: 2584-2589
Authors:
Chen L
;
Yang X
;
Yang FH
;
Zhao JH
;
Misuraca J
;
Xiong P
;
von Molnar S
;
Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn
Adobe PDF(3284Kb)
  |  
Favorite
  |  
View/Download:1004/228
  |  
Submit date:2012/01/06
Manipulation
Gaas
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12, 页码: 123504
Authors:
Lv YJ
;
Lin ZJ
;
Meng LG
;
Yu YX
;
Luan CB
;
Cao ZF
;
Chen H
;
Sun BQ
;
Wang ZG
;
Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
Adobe PDF(753Kb)
  |  
Favorite
  |  
View/Download:1039/390
  |  
Submit date:2012/01/06