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Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 8, 页码: 83920
Authors:  Gupta, S;  Zaidi, T;  Melton, A;  Malguth, E;  Yu, HB;  Liu, ZQ;  Liu, XT;  Schwartz, J;  Ferguson, IT;  Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
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Ferromagnetic Properties  Semiconductors  Gan  Gagdn  
Backward pumping kilowatt Yb(3+)-doped double-clad fiber laser 期刊论文
LASER PHYSICS, 2011, 卷号: 21, 期号: 9, 页码: 1621-1624
Authors:  Han ZH;  Lin XC;  Hou W;  Yu HJ;  Zhou SZ;  Li JM;  Han, ZH (reprint author), Chinese Acad Sci, Inst Semicond, A35 QingHua E Rd, Beijing 100083, Peoples R China, zhhan@semi.ac.cn
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Output Power  
Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 42, 页码: 425103
Authors:  Lang, XL;  Xia, JB;  Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn;  xiajb@semi.ac.cn
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Gasb Super-lattice  Semiconductor Heterostructures  Deformation Potentials  Ii Superlattices  Band Parameters  Detectors  Approximation  Transitions  
Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 26, 页码: 262501
Authors:  Yu GQ;  Chen L;  Rizwan S;  Zhao JH;  Xu K;  Han XF;  Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn
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Temperature  (Ga  Ga1-xmnxas  Mn)As  Transport  Epilayers  Films  
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 520
Authors:  Ye, HQ;  Hu, CC;  Wang, G;  Zhao, HM;  Tian, HT;  Zhang, XW;  Wang, WX;  Liu, BL;  Liu, BL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China,blliu@iphy.ac.cn
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Quantum Beats  Spin-orbit Coupling  Magnetic Properties Of Nanostructures  Optical Creation Of Spin Polarized  Electron G-factor  Lande G-factor  Superlattices  Spintronics  Beats  Gaas  
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Origin of the low thermal conductivity of the thermoelectric material beta-Zn(4)Sb(3): An ab initio theoretical study 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 24, 页码: 241901
Authors:  Chen, WB;  Li, JB;  Chen, WB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,jbli@semi.ac.cn
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Phonon-glass  Interstitial Zn  Zn4sb3  Energy  Zinc  
A Programmable Vision Chip Based on Multiple Levels of Parallel Processors 期刊论文
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 卷号: 46, 期号: 9, 页码: 2132-2147
Authors:  Zhang WC;  Fu QY;  Wu NJ;  Zhang, WC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China, nanjian@red.semi.ac.cn
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Recognition Systems  Feature-extraction  Image  Sensor  Architecture  Design  Array  Vlsi  
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y;  Wang LJ;  Yu Y;  Ni HQ;  Xu YQ;  Niu ZC;  He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn
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1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range  
Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering 期刊论文
NANO LETTERS, 2011, 卷号: 11, 期号: 7, 页码: 2584-2589
Authors:  Chen L;  Yang X;  Yang FH;  Zhao JH;  Misuraca J;  Xiong P;  von Molnar S;  Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn
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Manipulation  Gaas