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(In)GaN/AlGaN/GaN异质结构中的二维电子和空穴气研究 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  闫俊达
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氮化镓  异质结构  二维空穴气  二维电子气  高电子迁移率晶体管  
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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三势垒隧穿结构中由外加垂直磁场引入的高子带非热占据 期刊论文
光谱学与光谱分析, 2003, 卷号: 23, 期号: 3, 页码: 470-473
Authors:  安龙;  唐艳;  章继东;  姬扬;  谭平恒;  杨富华;  郑厚植
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氮离子注入超高分子量聚乙烯的生物摩擦学性能 期刊论文
中国生物医学工程学报, 2001, 卷号: 20, 期号: 4, 页码: 380
Authors:  熊党生;  张彦华;  徐嘉东
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一种氮化镓基绝缘栅双极晶体管制备方法及其产品 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  王晓亮;  闫俊达;  李百泉;  王权;  肖红领;  冯春;  殷海波;  姜丽娟;  邱爱芹;  介芳
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