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High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文
Chin. Phys. B, 2013, 卷号: 22, 期号: 6, 页码: 067203
Authors:  Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
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Low-power circuits for the wireless ligament balance measurement system in TKA 期刊论文
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2012, 卷号: 72, 期号: 2, 页码: 293-302
Authors:  Chen H (Chen, Hong);  Zhang X (Zhang, Xu);  Liu M (Liu, Ming);  Hao WH (Hao, Wenhan);  Jia C (Jia, Chen);  Jiang HJ (Jiang, Hanjun);  Zhang C (Zhang, Chun);  Wang ZH (Wang, Zhihua)
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
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Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding, Jieqin;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Chen, Hong;  Bi, Yang;  Deng, Qinwen;  Zhang, Jingwen;  Hou, Xun
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A wirelessly ultra-low-power system for equilibrium measurements in total hip replacement surgery 期刊论文
2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012, 2012, 页码: 141-144
Authors:  Wang, Zhihua;  Chen, Hong;  Liu, Ming;  Jiang, Hanjun;  Sun, Tianjia;  Zhang, Xu
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高性能1mm AlGaN/GaN功率HEMTs研制 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 1, 页码: 88-91
Authors:  邵刚;  刘新宇;  和致经;  刘健;  魏珂;  陈晓娟;  吴德馨;  王晓亮;  陈宏
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采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件 期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:  陈晓娟;  刘新宇;  和致经;  刘键;  邵刚;  魏珂;  吴德馨;  王晓亮;  周钧铭;  陈宏
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