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中国科学院半导体研究所机构知识库
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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
Authors:
Weijiang Ni
;
Xiaoliang Wang
;
Miaolin Xu
;
Quan Wang
;
Chun Feng
;
Honglin Xiao
;
Lijuan Jiang
;
Wei Li
Adobe PDF(1611Kb)
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View/Download:34/0
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Submit date:2020/07/30
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:
Meilan Hao
;
Quan Wang
;
Lijuan Jiang
;
Chun Feng
;
Changxi Chen
;
Cuimei Wang
;
Hongling Xiao
;
Fengqi Liu
;
Xiangang Xu
;
Xiaoliang Wang
;
Zhanguo Wang
Adobe PDF(2912Kb)
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View/Download:99/1
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Submit date:2019/11/15
Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs
期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:
Wei Li
;
Quan Wang
;
Xiangmi Zhan
;
Junda Yan
;
Lijuan Jiang
;
Haibo Yin
;
Jiamin Gong
;
Xiaoliang Wang
;
Fengqi Liu
;
Baiquan Li
;
Zhanguo Wang
Adobe PDF(1907Kb)
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View/Download:293/9
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Submit date:2017/03/10
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:
He Kang
;
Quan Wang
;
Hongling Xiao
;
Cuimei Wang
;
Lijuan Jiang
;
Chun Feng
;
Hong Chen
;
Haibo Yin
;
Shenqi Qu
;
Enchao Peng
;
Jiamin Gong
;
Xiaoliang Wang
;
Baiquan Li
;
Zhanguo Wang
;
Xun Hou
Adobe PDF(368Kb)
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View/Download:255/5
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Submit date:2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor
期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Authors:
Lei Cui
;
Quan Wang
;
XiaoLiang Wang
;
HongLing Xiao
;
CuiMei Wang
;
LiJuan Jiang
;
Chun Feng
;
HaiBo Yin
;
JiaMin Gong
;
BaiQuan Li
;
ZhanGuo Wang
Adobe PDF(528Kb)
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View/Download:254/4
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Submit date:2016/03/29
High performance AlGaNGaN power switch with Si3N4 Insulation
期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:
Lin, Defeng
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Kang, He
;
Wang, Cuimei
;
Jiang, Lijuan
;
Feng, Chun
;
Chen, Hong
;
Deng, Qingwen
;
Bi, Yang
;
Zhang, Jingwen
;
Hou, Xun
Adobe PDF(1409Kb)
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View/Download:567/150
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Submit date:2014/03/18
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width
期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Authors:
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
Adobe PDF(942Kb)
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View/Download:401/92
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Submit date:2014/03/18
Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers
期刊论文
Journal of Crystal Growth, 2013, 卷号: 383, 页码: 25–29
Authors:
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
Adobe PDF(3509Kb)
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View/Download:387/122
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Submit date:2014/03/18
Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer
期刊论文
Journal of Alloys and Compounds, 2013, 卷号: 576, 页码: 48–53
Authors:
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
Adobe PDF(1198Kb)
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View/Download:525/149
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Submit date:2014/03/18
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors
期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Authors:
Xiaojia, Wan
;
Xiaoliang, Wang
;
Hongling, Xiao
;
Chun, Feng
;
Lijuan, Jiang
;
Shenqi, Qu
;
Zhanguo, Wang
;
Xun, Hou
Adobe PDF(282Kb)
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View/Download:526/159
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Submit date:2014/05/16