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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:  Wei Li;  Quan Wang;  Xiangmi Zhan;  Junda Yan;  Lijuan Jiang;  Haibo Yin;  Jiamin Gong;  Xiaoliang Wang;  Fengqi Liu;  Baiquan Li;  Zhanguo Wang
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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Authors:  Lei Cui;  Quan Wang;  XiaoLiang Wang;  HongLing Xiao;  CuiMei Wang;  LiJuan Jiang;  Chun Feng;  HaiBo Yin;  JiaMin Gong;  BaiQuan Li;  ZhanGuo Wang
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High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
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Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
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Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文
Journal of Crystal Growth, 2013, 卷号: 383, 页码: 25–29
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
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Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
Journal of Alloys and Compounds, 2013, 卷号: 576, 页码: 48–53
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
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Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Authors:  Xiaojia, Wan;  Xiaoliang, Wang;  Hongling, Xiao;  Chun, Feng;  Lijuan, Jiang;  Shenqi, Qu;  Zhanguo, Wang;  Xun, Hou
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Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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