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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 141101
Authors:  Wang, HL;  Yu, HY;  Zhou, XL;  Kan, Q;  Yuan, LJ;  Chen, WX;  Wang, W;  Ding, Y;  Pan, JQ
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Ultrabroad stimulated emission from quantum well laser 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 251101
Authors:  Wang, HL;  Zhou, XL;  Yu, HY;  Mi, JP;  Wang, JQ;  Bian, J;  Ding, Y;  Chen, WX;  Wang, W;  Pan, JQ
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新结构 GaN 基 HEMT 材料及器件研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  丁杰钦
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Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 523, 页码: 88-93
Authors:  Ding, JQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Feng, C;  Jiang, LJ
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
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Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate 期刊论文
THIN SOLID FILMS, 2012, 卷号: 520, 期号: 16, 页码: 5361-5366
Authors:  Hu, WX;  Cheng, BW;  Xue, CL;  Su, SJ;  Liu, Z;  Li, YM;  Wang, QM;  Wang, LJ;  Liu, JQ;  Ding, J;  Lin, GJ;  Lin, ZD
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Broad-band semiconductor optical amplifiers 期刊论文
JOURNAL OF LUMINESCENCE, 2007, 卷号: 122 Sp.Iss.SI, 期号: 0, 页码: 208-211
Authors:  Ding Y (Ding Ying);  Kan Q (Kan Qiang);  Wang JL (Wang Jun-ling);  Pan JQ (Pan Jiao-qing);  Zhou F (Zhou Fan);  Chen WX (Chen Wei-xi);  Wang W (Wang Wei);  Ding, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Semiconductor Optical Amplifiers (Soas)  
Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers 期刊论文
OPTICAL ENGINEERING, 2006, 卷号: 45, 期号: 9, 页码: Art.No.090501
Authors:  Feng W (Feng W.);  Ding Y (Ding Y.);  Pan JQ (Pan J. Q.);  Zhao LJ (Zhao L. J.);  Zhu HL (Zhu H. L.);  Wang W (Wang W.);  Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail:
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Buried Heterostructure  Regrowth  Multiple Quantum Well  Distributed Feed Back  Laser  High-temperature  Operation  10-gb/s  
Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220
Authors:  Pan JQ (Pan Jiao-Qing);  Zhao Q (Zhao Qian);  Zhu HL (Zhu Hong-Liang);  Zhao LJ (Zhao Ling-Juan);  Ding Y (Ding Ying);  Wang BJ (Wang Bao-Jun);  Zhou F (Zhou Fan);  Wang LF (Wang Lu-Feng);  Wang W (Wang Wei);  Pan, JQ, Chinese Acad Sci, Inst Semicond, Optoelect Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail:
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Mocvd  Ingaas/ingaasp  Strained Quantum Well  Distributed Feedback Laser  Tunable Diode-laser  Quantum-well Laser  1.74 Mu-m  Spectrometer  Methane  Power