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Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 22, 页码: A946-A954
Authors:  KUN WANG ;   QUAN WANG ;   JIAYAN CHU ;   HONGLING XIAO ;   XIAOLIANG WANG ;   ;   ZHANGUO WANG
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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
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Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance 期刊论文
Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200
Authors:  Shiming Liu;  Quan Wang;  Hongling Xiao;  Kun Wang;  Cuimei Wang;  Xiaoliang Wang;  Weikun Ge;  Zhanguo Wang
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Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
Journal of Applied Physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Authors:  Junda Yan;  Quan Wang;  Xiaoliang Wang;  Chun Feng;  Hongling Xiao;  Shiming Liu;  Jiamin Gong;  Fengqi Liu;  Baiquan Li
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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:  Wei Li;  Quan Wang;  Xiangmi Zhan;  Junda Yan;  Lijuan Jiang;  Haibo Yin;  Jiamin Gong;  Xiaoliang Wang;  Fengqi Liu;  Baiquan Li;  Zhanguo Wang
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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Authors:  Lei Cui;  Quan Wang;  XiaoLiang Wang;  HongLing Xiao;  CuiMei Wang;  LiJuan Jiang;  Chun Feng;  HaiBo Yin;  JiaMin Gong;  BaiQuan Li;  ZhanGuo Wang
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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
Physica B: Condensed Matter, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin;  Hou, Xun
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Persistent photoconductivity in neutron irradiated GaN 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 093005
Authors:  Zhang, Minglan;  Yang, Ruixia;  Liu, Naixin;  Wang, Xiaoliang
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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 051201
Authors:  Kong, Xin;  Wei, Ke;  Liu, Guoguo;  Liu, Xinyu;  Wang, Cuimei;  Wang, Xiaoliang
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