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中国科学院半导体研究所机构知识库
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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
Authors:
Weijiang Ni
;
Xiaoliang Wang
;
Miaolin Xu
;
Quan Wang
;
Chun Feng
;
Honglin Xiao
;
Lijuan Jiang
;
Wei Li
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View/Download:32/0
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Submit date:2020/07/30
Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures
期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 22, 页码: A946-A954
Authors:
KUN WANG
;
QUAN WANG
;
JIAYAN CHU
;
HONGLING XIAO
;
XIAOLIANG WANG
;
;
ZHANGUO WANG
Adobe PDF(4869Kb)
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View/Download:67/0
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Submit date:2019/11/15
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
Authors:
Meilan Hao
;
Quan Wang
;
Lijuan Jiang
;
Chun Feng
;
Changxi Chen
;
Cuimei Wang
;
Hongling Xiao
;
Fengqi Liu
;
Xiangang Xu
;
Xiaoliang Wang
;
Zhanguo Wang
Adobe PDF(2912Kb)
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View/Download:97/1
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Submit date:2019/11/15
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance
期刊论文
Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200
Authors:
Shiming Liu
;
Quan Wang
;
Hongling Xiao
;
Kun Wang
;
Cuimei Wang
;
Xiaoliang Wang
;
Weikun Ge
;
Zhanguo Wang
Adobe PDF(3900Kb)
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Submit date:2018/05/23
Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases
期刊论文
Journal of Applied Physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Authors:
Junda Yan
;
Quan Wang
;
Xiaoliang Wang
;
Chun Feng
;
Hongling Xiao
;
Shiming Liu
;
Jiamin Gong
;
Fengqi Liu
;
Baiquan Li
Adobe PDF(1447Kb)
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View/Download:254/3
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Submit date:2017/03/10
Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs
期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:
Wei Li
;
Quan Wang
;
Xiangmi Zhan
;
Junda Yan
;
Lijuan Jiang
;
Haibo Yin
;
Jiamin Gong
;
Xiaoliang Wang
;
Fengqi Liu
;
Baiquan Li
;
Zhanguo Wang
Adobe PDF(1907Kb)
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View/Download:292/9
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Submit date:2017/03/10
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:
He Kang
;
Quan Wang
;
Hongling Xiao
;
Cuimei Wang
;
Lijuan Jiang
;
Chun Feng
;
Hong Chen
;
Haibo Yin
;
Shenqi Qu
;
Enchao Peng
;
Jiamin Gong
;
Xiaoliang Wang
;
Baiquan Li
;
Zhanguo Wang
;
Xun Hou
Adobe PDF(368Kb)
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View/Download:254/5
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Submit date:2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor
期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Authors:
Lei Cui
;
Quan Wang
;
XiaoLiang Wang
;
HongLing Xiao
;
CuiMei Wang
;
LiJuan Jiang
;
Chun Feng
;
HaiBo Yin
;
JiaMin Gong
;
BaiQuan Li
;
ZhanGuo Wang
Adobe PDF(528Kb)
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View/Download:253/4
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Submit date:2016/03/29
Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
期刊论文
Physica B: Condensed Matter, 2013, 卷号: 414, 页码: 110-114
Authors:
Li, Zhidong
;
Xiao, Hongling
;
Wang, Xiaoliang
;
Wang, Cuimei
;
Deng, Qingwen
;
Jing, Liang
;
Ding, Jieqin
;
Hou, Xun
Adobe PDF(621Kb)
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View/Download:591/150
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Submit date:2014/04/28
Persistent photoconductivity in neutron irradiated GaN
期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 093005
Authors:
Zhang, Minglan
;
Yang, Ruixia
;
Liu, Naixin
;
Wang, Xiaoliang
Adobe PDF(321Kb)
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View/Download:452/129
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Submit date:2014/05/16