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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体材料科学中心 [4]
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林德峰 [2]
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AlGaN/GaN HEMT 电力电子器件制备与性能研究
学位论文
, 北京: 中国科学院研究生院, 2013
Authors:
林德峰
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View/Download:861/135
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Submit date:2013/06/20
High performance AlGaNGaN power switch with Si3N4 Insulation
期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:
Lin, Defeng
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Kang, He
;
Wang, Cuimei
;
Jiang, Lijuan
;
Feng, Chun
;
Chen, Hong
;
Deng, Qingwen
;
Bi, Yang
;
Zhang, Jingwen
;
Hou, Xun
Adobe PDF(1409Kb)
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View/Download:567/150
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Submit date:2014/03/18
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:
Bi, Yang
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Wang, Cuimei
;
Yang, Cuibai
;
Peng, Enchao
;
Lin, Defeng
;
Feng, Chun
;
Jiang, Lijuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(324Kb)
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View/Download:1091/370
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Submit date:2012/06/14
Aluminum
Electron Mobility
Gallium Nitride
High Electron Mobility Transistors
Indium
Poisson Equation
Polarization
Two Dimensional Electron Gas
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
;
Peng, EnChao
;
Lin, DeFeng
;
Feng, Chun
;
Jiang, LiJuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(385Kb)
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View/Download:1305/296
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Submit date:2012/06/14
Poisson Equation
An investigation on InxGa1-xN/GaN multiple quantum well solar cells
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Hou QF
;
Lin DF
;
Li JM
;
Wang ZG
;
Hou X
Adobe PDF(623Kb)
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View/Download:1510/491
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Submit date:2011/07/07
Fundamental-band Gap
Phase-separation
Efficiency
Inn
Emission
Layers
Model
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:
Bi Y
;
Wang XL
;
Yang CB
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
;
Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
Adobe PDF(385Kb)
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View/Download:1248/270
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Submit date:2011/09/14
2-dimensional Electron-gas
Algan/gan/ingan/gan Dh-hemts
Millimeter-wave Applications
Field-effect Transistors
Heterojunction Fets
Heterostructures
Passivation
Confinement
Performance
Barriers