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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 051201
Authors:
Kong, Xin
;
Wei, Ke
;
Liu, Guoguo
;
Liu, Xinyu
;
Wang, Cuimei
;
Wang, Xiaoliang
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View/Download:825/216
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Submit date:2013/08/27
Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)
期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467
Authors:
Chen C (Chen Chen)
;
Jia R (Jia Rui)
;
Li WL (Li Weilong)
;
Li HF (Li Haofeng)
;
Ye TC (Ye Tianchun)
;
Liu XY (Liu Xinyu)
;
Liu M (Liu Ming)
;
Kasai S (Kasai Seiya)
;
Tamotsu H (Tamotsu Hashizume)
;
Wu NJ (Wu Nanjian)
;
Jia, R, Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 电子邮箱地址: jiarui@ime.ac.cn
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View/Download:1174/384
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Submit date:2010/03/08
Electron Beam Deposition
具有场板结构的AlGaN/GaN HEMT的直流特性
期刊论文
半导体学报, 2008, 卷号: 29, 期号: 3, 页码: 554-558
Authors:
魏珂
;
刘新宇
;
和致经
;
吴德馨
Adobe PDF(797Kb)
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View/Download:848/307
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Submit date:2010/11/23
Structure optimization of field-plate AlGaN/GaN HEMTs
期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Authors:
Luo WJ (Luo Weijun)
;
Wei K (Wei Ke)
;
Chen XJ (Chen Xiaojuan)
;
Li CZ (Li Chengzhan)
;
Liu XY (Liu Xinyu)
;
Wang XL (Wang Xiaoliang)
;
Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
Adobe PDF(112Kb)
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View/Download:1361/291
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Submit date:2010/03/29
Gan
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Authors:
Yao Xiaojiang
;
Li Bin
;
Chen Yanhu
;
Chen Xiaojuan
;
Wei Ke
;
Li Chengzhan
;
Luo Weijun
;
WANG Xiaoliang
;
Liu Dan
;
Liu Guoguo
;
Liu Xinyu
Adobe PDF(304Kb)
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View/Download:950/253
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Submit date:2010/11/23
高性能1mm SiC基AlGaN/GaN功率HEMT研制
期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1981-1983
Authors:
罗卫军
;
陈晓娟
;
李成瞻
;
刘新宇
;
和致经
;
魏珂
;
梁晓新
;
王晓亮
Adobe PDF(528Kb)
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View/Download:891/263
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Submit date:2010/11/23
A Radial Stub Test Circuit for Microwave Power Devices
期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1557-1561
Authors:
Luo Weijun
;
Chen Xiaojuan
;
Liang Xiaoxin
;
Ma Xiaolin
;
Liu Xinyu
;
Wang Xiaoliang
Adobe PDF(694Kb)
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View/Download:1105/405
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Submit date:2010/11/23
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
Authors:
Wang Xiaoliang
;
Hu Guoxin
;
Ma Zhiyong
;
Xiao Hongling
;
Wang Cuimei
;
Luo Weijun
;
Liu Xinyu
;
Chen Xiaojuan
;
Li Jianping
;
Li Jinmin
;
Qian He
;
Wang Zhanguo
Adobe PDF(559Kb)
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View/Download:1378/387
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Submit date:2010/11/23
高性能1mm AlGaN/GaN功率HEMTs研制
期刊论文
半导体学报, 2005, 卷号: 26, 期号: 1, 页码: 88-91
Authors:
邵刚
;
刘新宇
;
和致经
;
刘健
;
魏珂
;
陈晓娟
;
吴德馨
;
王晓亮
;
陈宏
Adobe PDF(207Kb)
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View/Download:922/346
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Submit date:2010/11/23
采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件
期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:
陈晓娟
;
刘新宇
;
和致经
;
刘键
;
邵刚
;
魏珂
;
吴德馨
;
王晓亮
;
周钧铭
;
陈宏
Adobe PDF(417Kb)
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View/Download:1094/304
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Submit date:2010/11/23