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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 051201
Authors:  Kong, Xin;  Wei, Ke;  Liu, Guoguo;  Liu, Xinyu;  Wang, Cuimei;  Wang, Xiaoliang
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Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467
Authors:  Chen C (Chen Chen);  Jia R (Jia Rui);  Li WL (Li Weilong);  Li HF (Li Haofeng);  Ye TC (Ye Tianchun);  Liu XY (Liu Xinyu);  Liu M (Liu Ming);  Kasai S (Kasai Seiya);  Tamotsu H (Tamotsu Hashizume);  Wu NJ (Wu Nanjian);  Jia, R, Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 电子邮箱地址: jiarui@ime.ac.cn
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Electron Beam Deposition  
具有场板结构的AlGaN／GaN HEMT的直流特性 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 3, 页码: 554-558
Authors:  魏珂;  刘新宇;  和致经;  吴德馨
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Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Authors:  Luo WJ (Luo Weijun);  Wei K (Wei Ke);  Chen XJ (Chen Xiaojuan);  Li CZ (Li Chengzhan);  Liu XY (Liu Xinyu);  Wang XL (Wang Xiaoliang);  Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
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Gan  
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Authors:  Yao Xiaojiang;  Li Bin;  Chen Yanhu;  Chen Xiaojuan;  Wei Ke;  Li Chengzhan;  Luo Weijun;  WANG Xiaoliang;  Liu Dan;  Liu Guoguo;  Liu Xinyu
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高性能1mm SiC基AlGaN/GaN功率HEMT研制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1981-1983
Authors:  罗卫军;  陈晓娟;  李成瞻;  刘新宇;  和致经;  魏珂;  梁晓新;  王晓亮
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A Radial Stub Test Circuit for Microwave Power Devices 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1557-1561
Authors:  Luo Weijun;  Chen Xiaojuan;  Liang Xiaoxin;  Ma Xiaolin;  Liu Xinyu;  Wang Xiaoliang
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
Authors:  Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
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高性能1mm AlGaN/GaN功率HEMTs研制 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 1, 页码: 88-91
Authors:  邵刚;  刘新宇;  和致经;  刘健;  魏珂;  陈晓娟;  吴德馨;  王晓亮;  陈宏
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采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件 期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:  陈晓娟;  刘新宇;  和致经;  刘键;  邵刚;  魏珂;  吴德馨;  王晓亮;  周钧铭;  陈宏
Adobe PDF(417Kb)  |  Favorite  |  View/Download：1038/304  |  Submit date：2010/11/23