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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Authors:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie;  Cao, Zhifang;  Yu, Yingxia;  Wang, Zhanguo
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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 10, 页码: 10-12
Authors:  Zhao Jianzhi;  Lin Zhaojun;  Corrigan T D;  Zhang Yu;  Li Huijun;  Wang Zhangguo
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Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 17, 页码: Art.No.173507
Authors:  Zhao J (Zhao, Jianzhi);  Lin Z (Lin, Zhaojun);  Corrigan TD (Corrigan, Timothy D.);  Wang Z (Wang, Zhen);  You Z (You, Zhidong);  Wang Z (Wang, Zhanguo);  Zhao, J, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn
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Field-effect Transistors  
Au-GaN肖特基结的伏安特性 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 4, 页码: 369
Authors:  林兆军;  张太平;  武国英;  王玮;  阎桂珍;  孙殿照;  张建平;  张国义
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Y沸石中组装CdSe纳米团簇的实验研究 期刊论文
武汉大学学报. 自然科学版, 2000, 卷号: 46, 期号: 3, 页码: 327
Authors:  彭浩;  马莉;  林兆军;  刘舒曼;  王少阶
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CdSe纳米团簇的透射电镜研究 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 3, 页码: 181
Authors:  许燕;  林兆军;  陈伟;  白元强;  方克明
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量子点的介电常数 期刊论文
科学通报, 1998, 卷号: 43, 期号: 7, 页码: 709
Authors:  林兆军;  王占国;  许燕;  陈伟;  李国华;  方克明;  林兰英
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