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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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AlGaN/GaN基电力电子器件制备与性能研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  康贺
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High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
Adobe PDF(1409Kb)  |  Favorite  |  View/Download：567/150  |  Submit date：2014/03/18
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
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完全无阻塞光开关阵中构成重排无阻塞光开关阵的数目 期刊论文
通信学报, 1996, 卷号: 17, 期号: 4, 页码: 118
Authors:  康寿万;  庄婉如;  董玉和
Adobe PDF(317Kb)  |  Favorite  |  View/Download：978/259  |  Submit date：2010/11/23
光开关交叉角的上限和开关对数值孔径的影响 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 12, 页码: 937
Authors:  康寿万;  董玉和;  庄婉和
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基于GaN基异质结构的二极管结构及制作方法 专利
专利类型: 发明, 公开日期: 2014-07-02
Inventors:  康贺;  王晓亮;  肖红领;  王翠梅;  冯春;  姜丽娟;  殷海波;  崔磊
Adobe PDF(566Kb)  |  Favorite  |  View/Download：457/108  |  Submit date：2014/11/24