SEMI OpenIR  > 中科院半导体材料科学重点实验室
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:18Pages:182102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23761
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ding JQ ,Wang XL ,Xiao HL ,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. APPLIED PHYSICS LETTERS,2012,101(18):182102.
APA Ding JQ .,Wang XL .,Xiao HL .,Wang CM .,Chen H .,...&Hou X .(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.APPLIED PHYSICS LETTERS,101(18),182102.
MLA Ding JQ ,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".APPLIED PHYSICS LETTERS 101.18(2012):182102.
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