Browse/Search Results:  1-4 of 4 Help

Selected(0)Clear Items/Page:    Sort:
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
Adobe PDF(817Kb)  |  Favorite  |  View/Download:881/262  |  Submit date:2013/03/27
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
Adobe PDF(908Kb)  |  Favorite  |  View/Download:860/221  |  Submit date:2013/04/02
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
Adobe PDF(741Kb)  |  Favorite  |  View/Download:791/270  |  Submit date:2013/04/02
Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Authors:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie;  Cao, Zhifang;  Yu, Yingxia;  Wang, Zhanguo
Adobe PDF(905Kb)  |  Favorite  |  View/Download:636/196  |  Submit date:2013/05/07