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Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 26680
Authors:  Geng Chen;  Yang Zou;  Wen-Hao Zhang;  Zi-Huai Zhang;  Zong-Quan Zhou;  De-Yong He;  Jian-Shun Tang;  Bi-Heng Liu;  Ying Yu;  Guo-Wei Zha;  Hai-Qiao Ni;  Zhi-Chuan Niu;  Yong-Jian Han;  Chuan-Feng Li;  Guang-Can Guo
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Three-coherent-output narrow-linewidth and tunable single frequency 1x2 multi-mode-interferometer laser diode 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 6, 页码: 5846-5854
Authors:  Hua Yang;  Mingqi Yang;  Padraic E. Morrissey;  Dan Lu;  Bi Wei Pan;  Lingjuan Zhao;  Brian Corbett;  Frank H. Peters
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High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding, Jieqin;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Chen, Hong;  Bi, Yang;  Deng, Qinwen;  Zhang, Jingwen;  Hou, Xun
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GaN 基 HEMT材料的新结构研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  毕杨
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氮化镓  铟铝氮  二维电子气  高电子迁移率晶体管  短沟道效应  
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan,;  Bi, Y.(ybi@semi.ac.cn)
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Poisson Equation  
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi Y;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Peng EC;  Lin DF;  Feng C;  Jiang LJ;  Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
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2-dimensional Electron-gas  Algan/gan/ingan/gan Dh-hemts  Millimeter-wave Applications  Field-effect Transistors  Heterojunction Fets  Heterostructures  Passivation  Confinement  Performance  Barriers  
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.18401
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Bi Y;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency