SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
2013
Source PublicationChin. Phys. B
Volume22Issue:6Pages:067203
Subject Area半导体材料
Indexed BySCI
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24535
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo. Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor[J]. Chin. Phys. B,2013,22(6):067203.
APA Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo.(2013).Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor.Chin. Phys. B,22(6),067203.
MLA Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo."Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor".Chin. Phys. B 22.6(2013):067203.
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