SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高性能1mm AlGaN/GaN功率HEMTs研制
邵刚; 刘新宇; 和致经; 刘健; 魏珂; 陈晓娟; 吴德馨; 王晓亮; 陈宏
2005
Source Publication半导体学报
Volume26Issue:1Pages:88-91
Abstract报道了基于蓝宝石衬底的高性能1mmAlGaN/GaNHEMTs功率器件.为了提高微波功率器件性能,采用新的欧姆接触和新型空气桥方案.测试表明,器件电流密度为0.784A/mm,跨导197mS/mm,击穿电压大于40V,截止态漏电较小,1mm栅宽器件的单位截止频率达到20GHz,最大振荡频率为28GHz,功率增益为11dB,功率密度为1.2W/mm,PAE为32%,两端口阻抗特性显示了在微波应用中的良好潜力.
metadata_83中国科学院微电子研究所;中国科学院半导体研究所;中国科学院物理研究所
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,中国科学院重点创新
Indexed ByCSCD
Language中文
CSCD IDCSCD:1870697
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17203
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邵刚,刘新宇,和致经,等. 高性能1mm AlGaN/GaN功率HEMTs研制[J]. 半导体学报,2005,26(1):88-91.
APA 邵刚.,刘新宇.,和致经.,刘健.,魏珂.,...&陈宏.(2005).高性能1mm AlGaN/GaN功率HEMTs研制.半导体学报,26(1),88-91.
MLA 邵刚,et al."高性能1mm AlGaN/GaN功率HEMTs研制".半导体学报 26.1(2005):88-91.
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