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Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84345
Authors:  Kong JX;  Zhu QS;  Xu B;  Wang ZG;  Kong, JX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. jxkong@semi.ac.cn
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A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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Mu-m  Temperature  Detectors  Operation  
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device  
Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 24, 页码: Art. No. 245104
Authors:  Zhang, XB;  Wang, XL;  Xiao, HL;  Yang, CB;  Ran, JX;  Wang, CM;  Hou, QF;  Li, JM;  Wang, ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xbzhang@semi.ac.cn
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In1-xgaxn Alloys  Band-gap  Irradiance  Single  Inn  
Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
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Inn  Mocvd  Mobility  
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Authors:  Luo, WJ;  Wang, XL;  Guo, LC;  Xiao, HL;  Wang, CM;  Ran, JX;  Li, JP;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
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Gallium Nitride Crack  Low Temperature Aluminum Nitride  Interlayer  Silicon  
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 10, 页码: Art. No. 102112
Authors:  Ma, P;  Gai, YQ;  Wang, JX;  Yang, FH;  Zeng, YP;  Li, JM;  Li, JB;  Ma, P, Chinese Acad Sci, Inst Semicond, Int Cooperat Base Solid State Lighting, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yqgai@semi.ac.cn;  jbli@semi.ac.cn
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P-type Gan  Molecular-beam Epitaxy  Augmented-wave Method  Vapor-phase Epitaxy  Electrical-properties  Oxygen  Activation  Silicon  
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Authors:  Luo WJ;  Wang XL;  Guo LC;  Mao HL;  Wang CM;  Ran JX;  Li JP;  Li JM;  Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn
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Gan  Si(111)  Crack  Aln  Mocvd  
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping