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InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration 期刊论文
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 4, 页码: 048102
Authors:  Li Xin-Kun;  Jin Peng;  Liang De-Chun;  Wu Ju;  Wang Zhan-Guo
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InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 4, 页码: 048102
Authors:  Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo
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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 2, 页码: 028102
Authors:  Li, Xin-Kun;  Liang, De-Chun;  Jin, Peng;  An, Qi;  Wei, Heng;  Wu, Jian;  Wang, Zhan-Guo
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A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 047801
Authors:  Tang GH (Tang Guang-Hua);  Xu B (Xu Bo);  Jiang;  LW (Jiang Li-Wen);  Kong JX (Kong Jin-Xia);  Kong;  N (Kong Ning);  Liang DC (Liang De-Chun);  Liang P (Liang Ping);  Ye XL (Ye Xiao-Ling);  Jin P (Jin Peng);  Liu FQ (Liu Feng-Qi);  Chen YH (Chen Yong-Hai);  Wang ZG (Wang Zhan-Guo);  Tang, GH, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: tghsugar@semi.ac.cn
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锰掺杂的锑化镓单晶的化学腐蚀方法 专利
专利类型: 发明, 专利号: CN200910081473.8, 公开日期: 2011-08-31
Inventors:  陈晓锋;  陈诺夫;  吴金良;  张秀兰;  柴春林;  俞育德
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采用宽脉冲激光器光源扫描辐照制作黑硅材料的方法 专利
专利类型: 发明, 专利号: CN200910078864.4, 公开日期: 2011-08-31
Inventors:  梁松;  朱洪亮;  林学春;  韩培德;  王宝华
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一种制作黑硅材料的方法 专利
专利类型: 发明, 专利号: CN200910078865.9, 公开日期: 2011-08-31
Inventors:  朱洪亮;  梁松;  韩培德;  林学春;  王宝华
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砷化镓基短波长量子点超辐射发光二极管 专利
专利类型: 发明, 专利号: CN102136534A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  梁德春;  李新坤;  金鹏;  王占国
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