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Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 卷号: 116, 期号: 4, 页码: 1757-1760
Authors:  Yang, YJ;  Zeng, YP
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Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers 期刊论文
Authors:  Yang, YJ;  Zeng, YP
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The role played by strain on phase separation in InGaN quantum wells 期刊论文
SOLID STATE COMMUNICATIONS, 2014, 卷号: 194, 页码: 25-29
Authors:  Yang, YJ;  Ma, P;  Wei, XC;  Zeng, YP
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Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes 期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 326, 页码: 121-125
Authors:  Yang, YJ;  Zeng, YP
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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233102
Authors:  Yang, YJ;  Wang, JX;  Li, JM;  Zeng, YP
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Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 9, 页码: A1001-A1008
Authors:  Ji, XL;  Wei, TB;  Yang, FH;  Lu, HX;  Wei, XC;  Ma, P;  Yi, XY;  Wang, JX;  Zeng, YP;  Wang, GH;  Li, JM
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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 313, 页码: 479-483
Authors:  Zhang, YW;  Zhang, Y;  Guan, M;  Cui, LJ;  Li, YB;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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The thermal stability study and improvement of 4H-SiC ohmic contact 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:  Liu, SB;  He, Z;  Zheng, L;  Liu, B;  Zhang, F;  Dong, L;  Tian, LX;  Shen, ZW;  Wang, JZ;  Huang, YJ;  Fan, ZC;  Liu, XF;  Yan, GG;  Zhao, WS;  Wang, L;  Sun, GS;  Yang, FH;  Zeng, YP
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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 13, 页码: A1093-A1100
Authors:  Wei, TB;  Huo, ZQ;  Zhang, YH;  Zheng, HY;  Chen, Y;  Yang, JK;  Hu, Q;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM
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