SEMI OpenIR

Browse/Search Results:  1-5 of 5 Help

Selected(0)Clear Items/Page:    Sort:
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Authors:  Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX;  Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
Adobe PDF(152Kb)  |  Favorite  |  View/Download:1272/484  |  Submit date:2010/03/08
Gan  Hemt  2deg  Mobility  Polarization  
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Authors:  Luo WJ;  Wang XL;  Guo LC;  Mao HL;  Wang CM;  Ran JX;  Li JP;  Li JM;  Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn
Adobe PDF(252Kb)  |  Favorite  |  View/Download:1288/615  |  Submit date:2010/03/08
Gan  Si(111)  Crack  Aln  Mocvd  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 791-793
Authors:  Wang XL (Wang Xiaoliang);  Wang CM (Wang Cuimei);  Hu GX (Hu Guoxin);  Mao HL (Mao Hongling);  Fang CB (Fang Cebao);  Wang JX (Wang Junxi);  Ran JX (Ran Junxue);  Li HP (Li Hanping);  Li JM (Li Jinmin);  Wang ZG (Wang, Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(315Kb)  |  Favorite  |  View/Download:1422/493  |  Submit date:2010/03/29
2deg  
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 835-839
Authors:  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Ma ZY (Ma Zhiyong);  Ran JX (Ran Junxue);  Wang CM (Wang Cuimei);  Mao HL (Mao Hongling);  Tang H (Tang Han);  Li HP (Li Hanping);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Jinmin LM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(277Kb)  |  Favorite  |  View/Download:1796/711  |  Submit date:2010/03/29
2deg  
GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究 期刊论文
半导体学报, 1990, 卷号: 11, 期号: 9, 页码: 659
Authors:  吴荣汉;  段海龙;  曾一平;  王启明;  林世鸣;  孔梅影;  张权生;  江德生;  谢茂海
Adobe PDF(125Kb)  |  Favorite  |  View/Download:911/311  |  Submit date:2010/11/23