SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo); Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
2007
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSNISSN: 0022-0248
Volume298 Sp.Iss.SIIssue:0Pages:235-238
AbstractThe effects of Si and Mg doping on the crystalline quality and In distribution in the InGaN films were studied by atomic force microscope (AFM), triple crystal X-ray diffraction (TCXRD) and Rutherford backscattering spectrometry (RBS). The undoped, Si-doped and Mg-doped InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) on (0 0 0 1) sapphire substrates. The electronic concentration in the Si-doped InGaN is about 2 x 10(19) cm(-3). It is found that the crystalline quality and In distribution in InGaN is slightly affected by the Si doping. In the Mg doped-case, the hole concentration is about 4 x 10(18) cm(-3) after annealing treatment. The surface morphology and crystalline quality of the Mg-doped InGaN are deteriorated significantly compared with the undoped InGaN. The growth rate of Mg-doped InGaN is higher than the undoped InGaN. Mg doping enhances the In incorporation in the InGaN alloy. The increase in In composition in the growth direction is more severe than the undoped InGaN. (c) 2006 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordDoping
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9600
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Ran JX ,Wang XL ,Hu GX ,et al. Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2007,298 Sp.Iss.SI(0):235-238.
APA Ran JX .,Wang XL .,Hu GX .,Li JP .,Wang BZ .,...&Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn.(2007).Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD.JOURNAL OF CRYSTAL GROWTH,298 Sp.Iss.SI(0),235-238.
MLA Ran JX ,et al."Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD".JOURNAL OF CRYSTAL GROWTH 298 Sp.Iss.SI.0(2007):235-238.
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