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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [8]
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Structures and optical characteristics of InGaN quantum dots grown by MBE
期刊论文
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:
Wang, Baozhu
;
Yan, Cuiying
;
Wang, Xiaoliang
;
Wang, B.(wangbz@semi.ac.cn)
Adobe PDF(952Kb)
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View/Download:980/318
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Submit date:2012/06/14
Atomic Force Microscopy
Gallium Nitride
Molecular Beam Epitaxy
Optical Materials
Optical Properties
Reflection High Energy Electron Diffraction
Sapphire
一种对气体传感器或半导体器件性能进行测试的系统
专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:
王晓亮
;
王新华
;
冯春
;
王保柱
;
马志勇
;
王军喜
;
胡国新
;
肖红领
;
冉军学
;
王翠梅
Adobe PDF(973Kb)
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View/Download:992/176
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Submit date:2009/06/11
用MBE外延InAlGaN单晶薄膜的方法
专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:
王保柱
;
王晓亮
;
王晓燕
;
王新华
;
肖红领
;
王军喜
;
刘宏新
Adobe PDF(344Kb)
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View/Download:888/189
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Submit date:2009/06/11
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:
Ran JX (Ran Junxue)
;
Wang XL (Wang Xiaoliang)
;
Hu GX (Hu Guoxin)
;
Li JP (Li Jianping)
;
Wang BZ (Wang Baozhu)
;
Xiao HL (Xiao Hongling)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zhanguo)
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(259Kb)
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View/Download:1292/323
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Submit date:2010/03/29
Doping
The influence of internal electric fields on the transition energy of InGaN/gaN quantum well
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 522-526
Authors:
Guo LC (Guo Lunchun)
;
Wang XL (Wang Xiaoliang)
;
Xiao HL (Xiao Hongling)
;
Wang BZ (Wang Baozhu)
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(165Kb)
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View/Download:1193/284
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Submit date:2010/03/29
Computer Simulation
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:
Wang XY (Wang, Xiaoyan)
;
Wang XL (Wang, Xiaoliang)
;
Hu GX (Hu, Guoxin)
;
Wang BZ (Wang, Baozhu)
;
Ma ZY (Ma, Zhiyong)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Ran JX (Ran, Junxue)
;
Li JP (Li, Jianping)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
Adobe PDF(325Kb)
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View/Download:1173/329
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Submit date:2010/03/29
Alxga1-xn
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Authors:
Wang XY (Wang Xiaoyan)
;
Wang XL (Wang Xiaoliang)
;
Wang BZ (Wang Baozhu)
;
Xiao HL (Xiao Hongling)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Li AN (Li Antnin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(241Kb)
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View/Download:1207/386
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Submit date:2010/03/29
Molecular-beam Epitaxy
GaN基UV-LED材料生长和特性研究
学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:
王保柱
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View/Download:627/50
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Submit date:2009/04/13
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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View/Download:1263/341
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Submit date:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth