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Annealing studies of boron implanted emitters for n-silicon solar cells 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 3, 页码: 035011
Authors:  Liang, P;  Han, PD;  Fan, YJ;  Xing, YP
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Metallic conduction behavior in selenium-hyperdoped silicon 期刊论文
Authors:  Hu, SX;  Han, PD;  Liang, P;  Xing, YP;  Lou, SS
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5, 页码: 054204
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
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Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 12, 页码: 123107
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Hao, HY;  Xu, YQ;  Niu, ZC
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Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 8, 页码: Art. No. 088101
Authors:  Sun GS (Sun Guo-Sheng);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Yang T (Yang Ting);  Wu HL (Wu Hai-Lei);  Yan GG (Yan Guo-Guo);  Zhao YM (Zhao Yong-Mei);  Ning J (Ning Jin);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min)
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3c-sic  Heteroepitaxial  Multi-wafer  Uniformity  
一种制备氮化物单晶衬底的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  刘喆;  钟兴儒;  魏同波;  马平;  王军喜;  曾一平;  李晋闽
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制造厚膜氮化物材料的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2006-12-20, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  王军喜;  钟兴儒;  李晋闽;  曾一平;  段瑞飞;  马平;  魏同波;  林郭强
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制备绝缘体上锗硅薄膜材料的方法 专利
专利类型: 发明, 申请日期: 2006-05-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘超;  高兴国;  李建平;  曾一平
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Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Authors:  Liu XF (Liu Xing-Fang);  Sun GS (Sun Guo-Sheng);  Li JM (Li Jin-Min);  Zhao YM (Zhao Yong-Mei);  Li JY (Li Jia-Ye);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Zeng YP (Zeng Yi-Ping);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. E-mail:
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Spectroscopy  Growth  Polytypes  Silicon  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer