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无权访问的条目 期刊论文
Authors:  Liang, P;  Han, PD;  Fan, YJ;  Xing, YP
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无权访问的条目 期刊论文
Authors:  Hu, SX;  Han, PD;  Liang, P;  Xing, YP;  Lou, SS
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无权访问的条目 期刊论文
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Hao, HY;  Xu, YQ;  Niu, ZC
Adobe PDF(1316Kb)  |  Favorite  |  View/Download：569/102  |  Submit date：2015/03/20
无权访问的条目 期刊论文
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
Adobe PDF(642Kb)  |  Favorite  |  View/Download：550/102  |  Submit date：2015/04/02
无权访问的条目 期刊论文
Authors:  Sun GS (Sun Guo-Sheng);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Yang T (Yang Ting);  Wu HL (Wu Hai-Lei);  Yan GG (Yan Guo-Guo);  Zhao YM (Zhao Yong-Mei);  Ning J (Ning Jin);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min)
Adobe PDF(185Kb)  |  Favorite  |  View/Download：1067/314  |  Submit date：2010/09/07
一种制备氮化物单晶衬底的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  刘喆;  钟兴儒;  魏同波;  马平;  王军喜;  曾一平;  李晋闽
Adobe PDF(616Kb)  |  Favorite  |  View/Download：1043/234  |  Submit date：2009/06/11
制造厚膜氮化物材料的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2006-12-20, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  王军喜;  钟兴儒;  李晋闽;  曾一平;  段瑞飞;  马平;  魏同波;  林郭强
Adobe PDF(457Kb)  |  Favorite  |  View/Download：1011/189  |  Submit date：2009/06/11
制备绝缘体上锗硅薄膜材料的方法 专利
专利类型: 发明, 申请日期: 2006-05-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘超;  高兴国;  李建平;  曾一平
Adobe PDF(370Kb)  |  Favorite  |  View/Download：849/176  |  Submit date：2009/06/11
无权访问的条目 期刊论文
Authors:  Liu XF (Liu Xing-Fang);  Sun GS (Sun Guo-Sheng);  Li JM (Li Jin-Min);  Zhao YM (Zhao Yong-Mei);  Li JY (Li Jia-Ye);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Zeng YP (Zeng Yi-Ping);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. E-mail: liuxf@mail.semi.ac.cn
Adobe PDF(580Kb)  |  Favorite  |  View/Download：1333/335  |  Submit date：2010/04/11
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  Favorite  |  View/Download：1125/264  |  Submit date：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer