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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 5, 页码: 052111
Authors:  Wang, J;  Xing, JL;  Xiang, W;  Wang, GW;  Xu, YQ;  Ren, ZW;  Niu, ZC
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5, 页码: 054204
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
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Self-Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics 期刊论文
ADVANCED MATERIALS, 2014, 卷号: 26, 期号: 17, 页码: 2710-2717
Authors:  Yu, Y;  Dou, XM;  Wei, B;  Zha, GW;  Shang, XJ;  Wang, L;  Su, D;  Xu, JX;  Wang, HY;  Ni, HQ;  Sun, BQ;  Ji, Y;  Han, XD;  Niu, ZC
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Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 26, 页码: 265103
Authors:  Wang, GW;  Xu, YQ;  Wang, LJ;  Ren, ZW;  He, ZH;  Xing, JL;  Niu, ZC
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Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  Chen Y (Chen Yan);  Deng AH (Deng Ai-Hong);  Tang B (Tang Bao);  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Niu ZC (Niu Zhi-Chuan)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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中长波InAs/GaSb II类超晶格材料与红外探测器 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  王国伟
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Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
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V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 7, 页码: Art. No. 077305
Authors:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei);  He ZH (He Zhen-Hong);  Niu ZC (Niu Zhi-Chuan);  Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
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Ir Detection Modules  Inas