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Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 5, 页码: 052411
Authors:  Zhao, CB;  Li, JB;  Yu, Y;  Ni, HQ;  Niu, ZC;  Zhang, XH
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Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 027803
Authors:  Li, MF;  Ni, HQ;  Ding, Y;  David, B;  Kong, L;  Ana, CM;  Niu, ZC
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Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 3633
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Li, MF;  Ni, HQ;  Niu, ZC;  Jiang, DS;  Sun, BQ
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In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots 期刊论文
EPL, 2014, 卷号: 107, 期号: 2, 页码: 27008
Authors:  Wu, XF;  Wei, H;  Dou, XM;  He, LX;  Sun, BQ;  Ding, K;  Yu, Y;  Ni, HQ;  Niu, ZC;  Ji, Y;  Li, SS;  Jiang, DS;  Guo, GC
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Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 10, 页码: 104209
Authors:  Dong, Y;  Wang, GL;  Wang, HP;  Ni, HQ;  Chen, JH;  Gao, FQ;  Qiao, ZT;  Yang, XH;  Niu, ZC
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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates 期刊论文
RUSSIAN PHYSICS JOURNAL, 2014, 卷号: 57, 期号: 3, 页码: 359-363
Authors:  Emel;  Kokhanenko, AP;  Abramkin, DS;  Pchelyakov, OP;  Putyato, MA;  Semyagin, BR;  Preobrazhenskii, VV;  Vasilenko, AP;  Feklin, DF;  Niu, ZC;  Ni, HQ
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Bichromatic resonant light scattering from a quantum dot 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 89, 期号: 15, 页码: 155305
Authors:  Peiris, M;  Konthasinghe, K;  Yu, Y;  Niu, ZC;  Muller, A
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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 5, 页码: 052111
Authors:  Wang, J;  Xing, JL;  Xiang, W;  Wang, GW;  Xu, YQ;  Ren, ZW;  Niu, ZC
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5, 页码: 054204
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
Adobe PDF(642Kb)  |  Favorite  |  View/Download：537/102  |  Submit date：2015/04/02