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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 5, 页码: 052111
Authors:  Wang, J;  Xing, JL;  Xiang, W;  Wang, GW;  Xu, YQ;  Ren, ZW;  Niu, ZC
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5, 页码: 054204
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
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Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 26, 页码: 265103
Authors:  Wang, GW;  Xu, YQ;  Wang, LJ;  Ren, ZW;  He, ZH;  Xing, JL;  Niu, ZC
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2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 7, 页码: Art. No. 077305
Authors:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei);  He ZH (He Zhen-Hong);  Niu ZC (Niu Zhi-Chuan);  Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
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Ir Detection Modules  Inas  
GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-10-21, 公开日期: 4010
Inventors:  周志强;  郝瑞亭;  汤 宝;  任正伟;  徐应强;  牛智川
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Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
CHINESE OPTICS LETTERS, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Authors:  Wei QX;  Ren ZW;  He ZH;  Niu ZC;  Wei QX Shanxi Univ Dept Phys Taiyuan 030006 Peoples R China. E-mail Address: qx.wei@163.com
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1.3 Mu-m  Room-temperature  Optical-properties  Cap Layer  Gaas  Deposition  
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb