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无权访问的条目 学位论文
Authors:  王凤翔
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17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators 期刊论文
Physics, 2018, 卷号: 113, 页码: 131102
Authors:  Alexander W. Bruch;  Xianwen Liu;  Xiang Guo;  Joshua B. Surya;  Zheng Gong;  Liang Zhang;  Junxi Wang;  Jianchang Yan;  Hong X. Tang
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2-5 μm锑化物中红外探测器 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  向伟
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锑化物 红外探测器 雪崩光电二极管 Inas/gasb超晶格 势垒探测器  
Gate-Tunable Ultra-High Photoresponsivity of 2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO 期刊论文
Advanced Electronic Materials, 2015, 卷号: 1, 期号: 10, 页码: 1500267
Authors:  Juehan Yang;  Nengjie Huo;  Yan Li;  Xiang-Wei Jiang;  Tao Li2;  Renxiong Li;  Fangyuan Lu;  Chao Fan;  Bo Li;  Kasper Nørgaard2;  Bo W. Laursen;  Zhongming Wei;  Jingbo Li;  Shu-Shen Li
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氮化物深紫外LED研究新进展 期刊论文
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2015, 卷号: 45, 期号: 6, 页码: 067303
Authors:  王军喜;  闫建昌;  郭亚楠;  张韵;  田迎冬;  朱邵歆;  陈翔;  孙莉莉;  李晋闽
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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 5, 页码: 052111
Authors:  Wang, J;  Xing, JL;  Xiang, W;  Wang, GW;  Xu, YQ;  Ren, ZW;  Niu, ZC
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5, 页码: 054204
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Xu, YQ;  Wang, GW;  Ren, ZW;  Niu, ZC
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Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 12, 页码: 123107
Authors:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W;  Hao, HY;  Xu, YQ;  Niu, ZC
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:  Zhang, Yanbo;  Du, Yandong;  Xiong, Ying;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua,;  Han, W.(weihua@semi.ac.cn)
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Carrier Concentration  Electric Fields  Fins(Heat Exchange)