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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang;  Sun, Baojun;  Hu, Qiang;  Wei, Xuecheng;  Duan, Ruifei;  Zhao, Lixia;  Zeng, Yiping;  Li, Jinmin
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Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114006
Authors:  An Tielei;  Sun Bo;  Wei Tongbo;  Zhao Lixia;  Duan Ruifei;  Liao Yuanxun;  Li Jinmin;  Yi Futing
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang;  Zeng, Yiping;  Xu, Shu;  Hu, Q.(huqiang@semi.ac.cn)
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Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors  
金属有机物化学气相沉积装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  段瑞飞;  王军喜;  王国宏;  曾一平;  李晋闽
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Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
RARE METAL MATERIALS AND ENGINEERING, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  Hu QA;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
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Gan  Hvpe  Freestanding Thick Films  Stress Release  Photoluminescence  Vapor-phase Epitaxy  Growth  Pressure  Hvpe  
自支撑GaN厚膜制备及其光学性能研究 期刊论文
稀有金属材料与工程, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:  胡强;  魏同波;  段瑞飞;  羊建坤;  霍自强;  卢铁城;  曾一平
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Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 9, 页码: 94009-1-94009-4
Authors:  Ji Xiaoli;  Yang Fuhua;  Wang Junxi;  Duan Ruifei;  Ding Kai;  Zeng Yiping;  Wang Guohong;  Li Jinmin
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一种垂直结构氮化物LED的制备方法 专利
专利类型: 发明, 申请日期: 2009-09-30, 公开日期: 4008
Inventors:  段瑞飞;  王军喜;  曾一平;  王国宏;  李晋闽 
Adobe PDF(479Kb)  |  Favorite  |  View/Download:1090/296  |  Submit date:2010/03/19