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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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具有背势垒的GaN基HEMT研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  彭恩超
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氮化镓  异质结  高电子迁移率晶体管  二维电子气  背势垒  
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
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Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文
Journal of Crystal Growth, 2013, 卷号: 383, 页码: 25–29
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
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Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
Journal of Alloys and Compounds, 2013, 卷号: 576, 页码: 48–53
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
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Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan,;  Bi, Y.(ybi@semi.ac.cn)
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Poisson Equation  
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi Y;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Peng EC;  Lin DF;  Feng C;  Jiang LJ;  Bi, Y (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. ybi@semi.ac.cn
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2-dimensional Electron-gas  Algan/gan/ingan/gan Dh-hemts  Millimeter-wave Applications  Field-effect Transistors  Heterojunction Fets  Heterostructures  Passivation  Confinement  Performance  Barriers  
具有复合空间层的氮化镓场效应晶体管结构及制作方法 专利
专利类型: 发明, 公开日期: 2013-05-22
Inventors:  王翠梅;  王晓亮;  彭恩超;  肖红领;  冯春;  姜丽娟;  陈竑
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双异质结构氮化镓基高电子迁移率晶体管结构及制作 方法 专利
专利类型: 发明, 公开日期: 2012-12-26
Inventors:  王晓亮;  王翠梅;  肖红领;  彭恩超;  冯春;  姜丽娟;  陈竑
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