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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体材料科学中心 [3]
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2011 [3]
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Pan X (Pan Xu)
;
Wei M (Wei Meng)
;
Yang CB (Yang Cuibai)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)
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View/Download:2604/831
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Submit date:2011/07/17
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:
Bi, Yang
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Wang, Cuimei
;
Yang, Cuibai
;
Peng, Enchao
;
Lin, Defeng
;
Feng, Chun
;
Jiang, Lijuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(324Kb)
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View/Download:1090/370
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Submit date:2012/06/14
Aluminum
Electron Mobility
Gallium Nitride
High Electron Mobility Transistors
Indium
Poisson Equation
Polarization
Two Dimensional Electron Gas
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
;
Peng, EnChao
;
Lin, DeFeng
;
Feng, Chun
;
Jiang, LiJuan,
;
Bi, Y.(ybi@semi.ac.cn)
Adobe PDF(385Kb)
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View/Download:1305/296
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Submit date:2012/06/14
Poisson Equation